2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. High Voltage. Complementary to 2SA1611 A L 3 3 C B Top View 1 1 K APPLICATIONS 2 E 2 General Purpose Amplification D F CLASSIFICATION OF hFE REF. Product-Rank 2SC4177-L4 2SC4177-L5 2SC4177-L6 2SC4177-L7 Range 90~180 135~270 200~400 300~600 Marking L4 L5 L6 L7 H G A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Collector PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7’ inch Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V IC 100 mA Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction & Storage temperature PC 150 mW RθJA 833 °C / W TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain1 Collector-Base Saturation Voltage Base-emitter Saturation Voltage Base-emitter Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob 60 50 5 90 0.55 - 250 3 100 100 600 0.3 1 0.65 - V V V nA nA V V V MHz pF Test Condition IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz Note: 1. Pulse test: pulse width≦350μs, duty cycle≦2.0% http://www.SeCoSGmbH.com/ 10-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 1