SECOS 2SC4177

2SC4177
0.1A , 60V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES



High DC Current Gain.
High Voltage.
Complementary to 2SA1611
A
L
3
3
C B
Top View
1
1
K
APPLICATIONS

2
E
2
General Purpose Amplification
D
F
CLASSIFICATION OF hFE
REF.
Product-Rank
2SC4177-L4
2SC4177-L5
2SC4177-L6
2SC4177-L7
Range
90~180
135~270
200~400
300~600
Marking
L4
L5
L6
L7
H
G
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
0.650 TYP.
Collector

PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOT-323
3K
7’ inch

Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
IC
100
mA
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction & Storage temperature
PC
150
mW
RθJA
833
°C / W
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain1
Collector-Base Saturation Voltage
Base-emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
60
50
5
90
0.55
-
250
3
100
100
600
0.3
1
0.65
-
V
V
V
nA
nA
V
V
V
MHz
pF
Test Condition
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=1mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, IE=0, f=1MHz
Note:
1. Pulse test: pulse width≦350μs, duty cycle≦2.0%
http://www.SeCoSGmbH.com/
10-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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