2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain High Voltage and High Current Complementary to 2SC4116 Small Package A L 3 3 C B Top View 1 1 K APPLICATIONS 2 E 2 General Purpose Amplification D F G CLASSIFICATION OF hFE Product-Rank 2SA1586-O 2SA1586-Y 2SA1586-GR(G) Range 70~140 120~240 200~400 Marking SO SY SG REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H J REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Collector PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7’ inch Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Ratings Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Parameter VCBO VCEO VEBO IC PC -50 -50 -5 -150 100 V V V mA mW Thermal Resistance Junction to Ambient RθJA 1250 °C / W TJ, TSTG 150, -55~150 °C Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -50 -50 -5 - - -100 -100 V V V A A hFE 70 - 400 VCE(sat) - - -0.3 V fT Cob 80 - - 7 MHz pF DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 25-Jan-2011 Rev. A Test Conditions IC = -100A, IE = 0 IC = -1mA, IB = 0 IE = -100A, IC = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -6V, IC = -2mA IC = -100mA, IB = -10mA VCE = -10V, IC = -1mA VCB = -10V, IE = 0, f = 1MHz Any changes of specification will not be informed individually. Page 1 of 1