2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage：VCE(sat) High DC Current Gain G 2SA1296-Y 120~240 Range Emitter Collector Base J CLASSIFICATION OF hFE(1) Product-Rank H A D 2SA1296-GR REF. B 200~400 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -20 -20 -6 -2 750 166 150, -55~150 V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob -20 -20 -6 120 40 - 120 40 -0.1 -0.1 400 -0.5 -0.85 - V V V μA μA DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 18-Jan-2011 Rev. A V V MHz pF Test condition IC= -0.1mA, IE=0 IC= -10mA, IB=0 IE= -0.1mA, IC=0 VCB= -20V, IE=0 VEB= -6V, IC=0 VCE= -2V, IC= -0.1A VCE= -2V, IC= -2A IC= -2A, IB= -0.1A VCE= -2V, IC= -0.1A VCE= -2V, IC= -0.5A VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1