SECOS 2SB1218A

2SB1218A
-0.1A , -60V
PNP Silicon Epitaxial Paner Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
APPLICATIONS

SOT-323
General Purpose Amplification
A
FEATURES


L
3
3
High DC Current Gain
Complementary to 2SD1819A
C B
Top View
1
1
2
K
E
2
CLASSIFICATION OF hFE
D
Product-Rank
2SB1218A-Q
2SB1218A-R
2SB1218A-S
Range
160~260
210~340
290~460
Marking
BQ1
BR1
BS1
F
MPQ
LeaderSize
SOT-323
3K
7’ inch
A
Millimeter
Min.
Max.
1.80
2.20
B
1.80
2.45
H
C
D
1.15
0.80
1.35
1.10
J
K
E
1.20
1.40
L
F
0.20
0.40
REF.
PACKAGE INFORMATION
Package
H
G
REF.
G
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
-
0.25
-
0.650 TYP.
Collector


Base

Emitter
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Ratings
Unit
Collector-Base Voltage
Parameter
VCBO
-45
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current
IC
-100
mA
Collector Power Dissipation
PC
150
mW
RθJA
833
°C / W
TJ, TSTG
150, -55 ~ 150
°C
Thermal Resistance From Junction to Ambient
Junction & Storage temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
Parameter
V(BR)CBO
-45
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
-45
-
-
V
IC= -2mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
-7
-
-
V
IE= -10μA, IC=0
Collector Cut-Off Current
ICBO
-
-
-100
nA
VCB= -20V, IE=0
Collector Cut-Off Current
ICEO
-
-
-100
μA
VEB= -10V, IB=0
Emitter Cut-off Current
IEBO
-
-
-100
nA
VEB= -5V, IC=0
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
hFE
160
-
460
VCE(sat)
-
-
-0.5
V
fT
-
80
-
MHz
Cob
-
2.7
-
pF
Test Conditions
IC= -10μA, IE=0
VCE= -10V, IC= -2mA
IC= -100mA, IB= -10mA
VCE= -10V, IE=1mA, f=200MHz
VCB= -10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 1