2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification A FEATURES L 3 3 High DC Current Gain Complementary to 2SD1819A C B Top View 1 1 2 K E 2 CLASSIFICATION OF hFE D Product-Rank 2SB1218A-Q 2SB1218A-R 2SB1218A-S Range 160~260 210~340 290~460 Marking BQ1 BR1 BS1 F MPQ LeaderSize SOT-323 3K 7’ inch A Millimeter Min. Max. 1.80 2.20 B 1.80 2.45 H C D 1.15 0.80 1.35 1.10 J K E 1.20 1.40 L F 0.20 0.40 REF. PACKAGE INFORMATION Package H G REF. G J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 - 0.25 - 0.650 TYP. Collector Base Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector-Base Voltage Parameter VCBO -45 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -7 V Collector Current IC -100 mA Collector Power Dissipation PC 150 mW RθJA 833 °C / W TJ, TSTG 150, -55 ~ 150 °C Thermal Resistance From Junction to Ambient Junction & Storage temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage Parameter V(BR)CBO -45 - - V Collector-Emitter Breakdown Voltage V(BR)CEO -45 - - V IC= -2mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -7 - - V IE= -10μA, IC=0 Collector Cut-Off Current ICBO - - -100 nA VCB= -20V, IE=0 Collector Cut-Off Current ICEO - - -100 μA VEB= -10V, IB=0 Emitter Cut-off Current IEBO - - -100 nA VEB= -5V, IC=0 DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 14-Feb-2011 Rev. A hFE 160 - 460 VCE(sat) - - -0.5 V fT - 80 - MHz Cob - 2.7 - pF Test Conditions IC= -10μA, IE=0 VCE= -10V, IC= -2mA IC= -100mA, IB= -10mA VCE= -10V, IE=1mA, f=200MHz VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1