2SD1767 0.7A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 High Breakdown Voltage and Current Excellent DC Current Gain Linearity Complementary to 2SB1189 4 1 CLASSIFICATION OF hFE 2 B C 3 E A E Product-Rank 2SD1767-P 2SD1767-Q 2SD1767-R Range 82~180 120~270 180~390 Marking DCP DCQ DCR C B D F G H Collector PACKAGE INFORMATION 2 Package MPQ Leader Size SOT-89 1K 7 inch K J REF. A B C D E F 1 Base 3 L Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 700 mA Collector Power Dissipation PC 500 mW RθJA 250 °C / W TJ, TSTG 150, -55~150 °C Maximum Junction to Ambient Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 - - V IC=2mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=50µA, IC=0 Collector Cut-Off Current ICBO - 0.5 µA VCB=50V, IE=0 Emitter Cut-Off Current IEBO - - 0.5 µA VEB=4V, IC=0 DC Current Gain hFE 82 - 390 VCE(sat) - - 0.4 V fT - 120 - MHz COB - 10 - pF Collector-Emitter Saturation voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 10-Nov-2011 Rev. A Test conditions VCE=3V, IC= 100mA IC=500mA, IB= 50mA VCE=10V,IC=50mA,f=100MH z VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1