2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Excellent hFE Linearity High Transition Frequency TO-92 G H Emitter Collector Base J A B CLASSIFICATION OF hFE 2SC1959-O 2SC1959-Y 2SC1959-GR hFE(1) 70~140 120~240 200~400 hFE(2) 25Min 40Min - Product-Rank Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. K E Range D C A B C D E F G H J K F Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 500 mW RθJA 250 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction To Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=35V, IE=0 Emitter Cut – Off Current IEBO - - 0.1 μA VEB=5V, IC=0 hFE(1) 70 - 400 VCE=1V, IC=100mA hFE(2) 25 - - VCE=6V, IC=400mA DC Current Gain Collector to Emitter Saturation Voltage Test Conditions VCE(sat) - - 0.25 V Base to Emitter Voltage VBE - - 1 V VCE=1V, IC=100mA Collector Output Capacitance Cob - 7 - pF VCB=6V, IE=0, f=1MHz fT - 300 - MHz Transition Frequency http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. A IC=100mA, IB=10mA VCE=6V, IC=20mA Any changes of specification will not be informed individually. Page 1 of 1