SECOS BC546_11

BC546 / BC547 / BC548
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
TO-92
FEATURE
G
H
Power Dissipation
CLASSIFICATION OF hFE
Product-Rank
BC546A
1Collector
2Base
3Emitter
J
A
BC546B
D
BC546C
REF.
B
Product-Rank
BC547A
BC547B
BC547C
A
B
C
D
E
F
G
H
J
K
K
Product-Rank
BC548A
BC548B
BC548C
Range
110~220
200~450
420~800
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
Collector
1
2
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction, Storage Temperature
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Symbol
BC546
BC547
BC548
BC546
BC547
BC548
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
80
50
30
65
45
30
6
100
625
150, -55~150
Unit
V
V
V
mA
mW
°C
Any changes of specification will not be informed individually.
Page 1 of 4
BC546 / BC547 / BC548
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
BC546
BC547
BC548
BC546
Collector to Emitter Breakdown
BC547
Voltage
BC548
Emitter to Base Breakdown Voltage
BC546
Collector Cut-Off Current
BC547
BC548
BC546
Collector Cut-Off Current
BC547
BC548
BC546
Emitter Cut-Off Current
BC547
BC548
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector to Base Breakdown
Voltage
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Min.
Typ.
Max.
80
50
30
65
45
30
6
110
150
-
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
800
0.3
1.1
-
Unit
Test Conditions
V
IC=100µA, IE=0
V
IC=1mA, IB=0
V
IE=10µA, IC=0
VCB=70V, IE=0
VCB=50V, IE=0
VCB=30V, IE=0
VCE=60V, IB=0
VCE=45V, IB=0
VCE=30V, IB=0
µA
µA
µA
VEB=5V, IC=0
VCE=5V, IC=2mA
V IC=100mA, IB=5mA
V IC=100mA, IB=5mA
MHz VCE=5V, IC=10mA, f=100MHz
Any changes of specification will not be informed individually.
Page 2 of 4
BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4