C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G Power Dissipation H CLASSIFICATION OF hFE (1) J Product-Rank C1815T-O C1815T-Y C1815T-GR Range 70~140 120~240 200~400 A D B REF. C A B C D E F G H J K K E Emitter Collector Base F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG 60 50 5 150 400 125, -55 ~ 125 V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob 60 50 5 70 80 - - V V V μA μA μA - 0.1 0.1 0.1 700 0.25 1 3.5 V V MHz pF NF - - 10 dB Noise Figure http://www.SeCoSGmbH.com/ 18-Mar-2010 Rev. B - Test condition IC=100μA, IE=0 IC=0.1mA, IB=0 IE=100μA, IC=0 VCB=60V, IE=0 VCE=50V, IB=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC=1mA, f=30MHz VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ Any changes of specification will not be informed individually. Page 1 of 2 C1815T Elektronische Bauelemente 0.15A , 60V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 18-Mar-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2