SECOS EMG11

EMG11
Dual N-Ch Digital Transistors (Built-in Resistors)
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES

SOT-553
Two DTC123JCA chips in a package
EQUIVALENT CIRCUIT
A
B
J
D
REF.
A
B
C
D
E
G
H
F
C
Millimeter
Min.
Max.
1.50
1.70
1.50
1.70
0.525
0.60
1.10
1.30
0.05
E
REF.
F
G
H
J
Millimeter
Min.
Max.
0.09
0.16
0.45
0.55
0.17
0.27
0.10
0.30
MARKING：G11
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-5 ~ 12
V
Output current
IO
100
mA
Power dissipation
PD
150
mW
TJ, TSTG
150, -55 ~ 150
℃
Junction & Storage temperature
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Symbol
Min.
Typ.
Input turn-on voltage
VI(ON)
1.1
-
-
Input cut-off voltage
VI(OFF)
-
-
0.5
Output voltage
VO(ON)
-
-
0.3
V
II
-
-
3.6
mA
A
Parameter
Input cut-off current
Output cut-off current
DC current gain
Max.
IO(OFF)
-
-
0.5
GI
80
-
-
Input resistance
R1
-
2.2
-
Resistance ratio
R2 / R1
17
-
26
fT
-
250
-
Transition frequency
http://www.SeCoSGmbH.com/
01-Jun-2010 Rev. A
Unit
V
Test Conditions
VCC= 0.3V, IO= 5mA
VCC= 5V, IO= 100A
IO=5mA, II=0.25mA
VI= 5V
VCC= 50V, VI= 0
VO= 5V, IO= 10mA
K
MHz
VCE= 10V, Ic= 5mA,
f=100MHz
Any changes of specification will not be informed individually.
Page 1 of 1