PANJIT PJESD5V0BQ4G

PJESD5V0BQ4G
QUAD BI-DIRECTIONAL TVS ARRAY FOR ESD PROTECTION
PRELIMINARY
This Quad Bi-directional TVS/Zener Array have been designed to protect sensitive
equipment against ESD in CMOS circuitry operatin at 5V. This TVS array offers an
integrated solution to protect up to 4 data lines in applications, where the board
space is a premium, in a Quad Flat no-Lead package that only occupies an area of
1.8 sq mm.
SPECIFICATION FEATURES
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
Low Leakage Current, Maximum of 1µA at rated voltage
Maximum Capacitance of 18pF per device at 0Vdc 1MHz
Peak Power Dissipation of 50W 8/20µs Waveform
1
Quad Flat No Lead package QFN (1.2x1.5 sq mm, Height: 0.75mm)
Lead Free Package 100% Tin Plating, Matte finish
GND
1
2
3
6
5
4
APPLICATIONS
Personal Digital Assistant (PDA)
Digital Cameras
Portable Instrumentation
Mobile Phones and Accessories
MP3 Players
MAXIMUM RATINGS (Per Device)
Symbol
Value
Units
Peak Pulse Power (8/20µs Waveform)
P PP
50
W
Peak Pulse Current (8/20µs Waveform)
I PPM
5
A
ESD Voltage (HBM Per MIL STD883C - Method 3015-6)
V ESD
25
kV
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Typical
Max
Units
5
V
Rating
ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C
Parameter
Reverse Stand-Off Voltage
Conditions
Symbol
Min
V WRM
Reverse Breakdown Voltage
VBR
I BR = 1mA
Reverse Leakage Current
IR
VR = 5V
1
µA
Clamping Voltage (8/20µs)
Vc
I pp = 4A
11
V
Off State Junction Capacitance
Cj
18
pF
12/16/2005
0 Vdc Bias f = 1MHz
Between I/O pins and GND
Page
1
6
V
15.5
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PJESD5V0BQ4G
TYPICAL CHARACTERISTIC CURVES (Per Device)
Tj = 25°C
Pulse Waveform
110
100
90
80
Percent of Ipp
Ipp, Amps
4
3
2
50% of Ipp @ 20µs
70
60
50
40
30
Rise time 10-90% - 8µs
20
10
1
0
8
8.5
9
9.5
10
10.5
11
Clamping Voltage, V
0
5
10
15
time, µsec
20
25
30
Typical Capacitance vs. Bias Voltage @1MHz
20
Capacitance, pF
PRELIMINARY
Clamping Voltage vs 8/20µs Ipp
5
15
10
5
0
0
12/16/2005
1
2
3
Bias Voltage, Vdc
4
5
Page 2
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PJESD5V0BQ4G
PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT
0.30±0.05 mm
PRELIMINARY
1.5±0.05 mm
0.6±0.05 mm
1.2±0.05 mm
0.20±0.05 mm
0.35±0.05 mm
0.5 mm
22.04 mm
0.75±0.025 mm
0.2±0.025 mm
12.0
12.0
18.0
25.0
23.0
19.7
19.7
Suggested Pad Layout (in mils)
12/16/2005
53.0
49.0
Alternate Pad Layout SOT666 (in mils)
Page 3
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