TetraFET D2032UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL A C B (2 pls) K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N DK • SUITABLE FOR BROAD BAND APPLICATIONS PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 • VERY LOW Crss PIN 3 DRAIN 2 GATE 2 • SIMPLE BIAS CIRCUITS PIN 5 GATE 1 DIM A B C D E F G H I J K M N PIN 4 • LOW NOISE mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 35W 65V ±20V 1A –65 to 150°C 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 6334 Issue 1 D2032UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current V VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA 1 μA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 0.2A 65 1 0.18 S 13 dB 40 % 20:1 — TOTAL DEVICE GPS Common Source Power Gain PO = 5W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 1GHz IDQ = 0.2A PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 12 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 6 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 0.5 pF * Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Max. 5.0°C / W Document Number 6334 Issue 1 D2032UK 3RXW : 9GV 9 ,GT $ I *+] 3LQ: 3RXW G% : *DLQ 9GV 9 ,GT $ I *+] 3LQ: 3RXW *DLQ Figure 1 Output Power and Gain vs. Input power 'UDLQ(IILFLHQF\ 3RXW 'UDLQ(IILFLHQF\ Figure 2 Output Power and Efficiency vs. Input Power OPTIMUM SOURCE AND LOAD IMPEDANCE ,0' G%F I 0+] I 0+] 9GV 9 3RXW:3(3 Frequency MHz ZS Ω ZL Ω 1000MHZ 1.1 - j2.5 5.1 - j17.1 ,GT $ ,GT $ Figure 3 IMD Vs. Output Power. Typical S Parameters ! Vds=28V, Idq=0.1A # MHZ S MA R 50 Semelab plc. !Freq !MHz S11 mag ang S21 mag ang S12 mag ang S22 mag ang 70 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.97 0.94 0.88 0.84 0.82 0.79 0.78 0.77 0.77 0.77 0.78 0.78 0.78 0.79 0.79 0.78 0.78 0.79 0.78 0.79 -36.4 -48.0 -65.3 -78.5 -88.4 -97.1 -105.5 -113.3 -121.8 -128.9 -136.7 -144.0 -150.8 -156.7 -160.9 -164.2 -166.3 -168.5 -170.3 -172.5 15.8 14.1 12.3 10.2 8.8 7.7 6.9 6.0 5.4 4.9 4.6 4.4 4.0 3.7 3.4 3.0 2.7 2.6 2.5 2.4 156.6 146.3 129.9 114.7 106.0 98.3 88.5 84.5 77.8 75.3 68.3 65.4 57.2 52.3 46.7 41.4 39.5 38.4 36.8 33.0 0.017 0.021 0.027 0.029 0.029 0.029 0.028 0.026 0.024 0.022 0.020 0.020 0.020 0.022 0.025 0.028 0.032 0.036 0.044 0.053 67.2 58.1 45.5 34.8 28.1 27.3 22.2 24.2 23.3 29.6 35.0 46.6 57.6 68.5 76.6 81.6 87.8 92.3 97.4 97.4 0.91 0.88 0.81 0.77 0.75 0.73 0.72 0.71 0.70 0.70 0.70 0.70 0.70 0.71 0.70 0.69 0.68 0.68 0.70 0.70 -23.2 -30.1 -40.3 -48.1 -54.2 -59.1 -64.3 -69.3 -75.2 -80.4 -86.5 -93.6 -99.6 -105.8 -111.3 -115.6 -117.0 -119.3 -121.0 -124.2 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 6334 Issue 1 D2032UK 10 +28V Gate-Bias L3 6.8K 1K2 100nF 1K2 1nF L1 1K2 D2032UK T3 T4 T5 30pF T11 T 1 10nF L2 T12 T13 T6 30pF T2 1-10pF 1-10pF 3.6pF 100uF 1-10pF 3.6pF 9.1pF T17 30pF 30pF T7 T8 T9 T10 D2032UK T14 T15 T16 1000MHz TEST FIXTURE Substrate 0.8mm thick PTFE/glass All microstrip lines W = 2.7mm T1 T2, T17 T3, T7 T4, T8 T5, T9 T6, T10 T11,T14 T12,T15 T13,T16 15.7 45mm 50 OHM UT 34 semi-rigid coax 7mm 15mm 7.6mm 8mm 8mm 11.2mm 7mm L1, L2 L3 6 turns 24swg enamelled copper wire, 3mm i.d. 1.5 turn 24swg enamelled copper wire on Siemens B62152-A7X 2 hole core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 6334 Issue 1