TetraFET D1016UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 D A E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS DQ PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 • VERY LOW Crss • USEFUL PO AT 1GHz • LOW NOISE DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 Inches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0.060 0.200 0.744 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 100W 70V ±20V 5A –65 to 150°C 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.12/00 D1016UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current V VGS = 0 ID = 100mA VDS = 28V VGS = 0 1 mA 1 mA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 1A 70 1 0.8 S 13 dB 50 % 20:1 — TOTAL DEVICE GPS h VSWR Common Source Power Gain PO = 40W Drain Efficiency VDS = 28V Load Mismatch Tolerance f = 400MHz IDQ = 0.4A PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 60 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 30 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2.5 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 1.75°C / W Prelim.12/00 D1016UK P o u t W 6 0 8 0 6 0 1 8 5 0 7 0 5 0 1 6 4 0 6 0 4 0 1 4 3 0 1 2 3 0 5 0 2 0 f = 4 0 0 M H z Id q = 0 .4 A V d s = 2 8 V 1 0 0 0 2 4 6 P in 8 1 0 D r a in E ffic ie n c y P o u t % W 4 0 2 0 3 0 1 0 2 0 1 2 f = 4 0 0 M H z Id q = 0 .4 A V d s = 2 8 V 0 0 2 4 6 P in 1 0 8 W 1 0 1 2 6 P o u t G a in Figure 1 Figure 2 Power Output and efficiency vs. Power Input. Power Output and Gain vs. Power Input. 0 d B 8 P o u t D r a in E ffic ie n c y W G a in OPTIMUM SOURCE AND LOAD IMPEDANCE -1 0 -2 0 IM D 3 -3 0 d B c -4 0 f1 = f2 = Id q = V d s = -5 0 -6 0 0 1 0 2 0 3 0 P o u t W ZS ZL 400MHZ 10.7 - j35.4 13.8 - j22.2 W W 4 0 0 M H z 4 0 0 .1 M H z 0 .4 A 2 8 V 4 0 P E P Frequency MHz 5 0 6 0 IM D 3 Figure 3 IMD Vs. Output Power. Typical S Parameters ! # !Freq !MHz 100 200 300 400 500 600 700 800 900 1000 Semelab plc. VDS = 28V, IDQ = 1A MHZ S MA R 50 S11 mag 0.767 0.813 0.841 0.861 0.882 0.902 0.923 0.912 0.923 0.923 ang -135 -153 -161 -169 -175 180 174 170 164 161 S21 mag 22.646 10.116 5.623 3.548 2.820 2.093 1.365 1.096 0.902 0.724 ang 88 57 39 25 20 14 9 2 -3 -4 S12 mag 0.0155 0.0099 0.0076 0.0130 0.0210 0.0285 0.0376 0.0457 0.0484 0.0596 ang 9 4 49 79 78 78 77 66 66 64 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk S22 mag 0.531 0.692 0.794 0.841 0.875 0.910 0.944 0.944 0.933 0.944 ang -103 -131 -143 -151 -156 -161 -166 -170 -176 -177 Prelim.12/00 D1016UK L 2 3 9 L 1 B IA S 1 0 0 n F 3 0 p F 1 0 K 1 0 K 6 2 0 p F 1 0 0 n F + 2 8 V 1 0 u F T 6 T 2 T 8 T 4 T 1 IN P U T 6 2 0 p F T 1 0 D 1 0 1 6 U K 1 -3 .5 p F 2 -1 8 p F 2 -1 8 p F 6 2 0 p F 3 0 p F T 9 D 1 0 1 6 U K T 3 O U T P U T 6 2 0 p F T 5 T 7 TEST FIXTURE Substrate 1.6mm FR4 All microstrip lines W = 2.5mm T1 T2, T3 T4, T5 T6, T7 T8, T9 T10 L1 L2 Semelab plc. 45mm 50 OHM UT34 semi-rigid coax 55mm 50 OHM UT 34 semi-rigid coax 25mm microstrip line 10mm microstrip line 45mm 25 OHM UT 34-25 semi-rigid coax 60mm 50OHM UT34 semi-rigid coax 4 turns 19swg enamelled copper wire, 7mm i.d. 2.5 turns of 19swg enamelled copper wire on T50-6 ferrite toroid Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.12/00