TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS DA PIN 1 SOURCE PIN 2 DRAIN • LOW Crss PIN 3 SOURCE PIN 4 GATE • SIMPLE BIAS CIRCUITS DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 50W 70V ±20V 5A –65 to 150°C 200°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 9/98 D1001UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 100mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 1A GPS Common Source Power Gain PO = 20W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 175MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.1A 70 1 0.8 S 16 dB 50 % 20:1 — Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 60 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 30 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2.5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Max. 3.5°C / W 9/98 D1001UK 45 90 45 19 40 80 40 18 35 70 35 17 30 60 30 16 P out 25 50 Efficiency P out 25 15 Gain W 20 40 % W 20 14 dB 15 30 15 13 20 10 5 10 5 0 0 0 VDS = 28V I DQ = 0.1A f = 175MHz 10 0 0.25 0.5 0.75 1 1.25 P in W 1.5 1.75 VDS = 28V I DQ = 0.1A f = 175MHz 0.25 0.5 0.75 1 1.25 P in W Pout Drain Efficiency Figure 1 – Power Output and Efficiency vs. Power Input. 11 10 0 2 12 1.5 1.75 2 Pout Gain Figure 2 – Power Output & Gain vs. Power Input. -10 -15 IMD3 dBc -20 D1001UK -25 OPTIMUM SOURCE AND LOAD IMPEDANCE -30 -35 Frequency MHz 175MHz VDS = 28V f1 = 175.0MHz f2 = 175.1MHz -40 -45 0 5 10 15 20 25 P out W PEP 30 35 ZS Ω 5 + j14 ZL Ω 12 – j14 40 IDQ = 0.1A IDQ = 0.5A Figure 3 – IMD vs. Output Power. Typical S Parameters ! # !Freq MHz 50 100 150 200 250 300 350 400 450 500 550 600 Semelab plc. VDS = 28V, IDQ = 0.1A MHZ S MA R 50 S11 mag 0.780 0.775 0.795 0.826 0.853 0.878 0.903 0.923 0.944 0.963 0.978 0.985 ang -116 -135 -149 -159 -169 -179 171 161 151 142 136 131 S21 mag 18 9.312 6.077 4.193 3.216 2.566 1.991 1.655 1.322 1.121 0.899 0.762 ang 112 85 68 53 43 35 23 18 9 4 -2 -7 S12 mag 0.034 0.030 0.022 0.017 0.023 0.039 0.052 0.070 0.080 0.098 0.108 0.119 ang 25 11 14 44 74 89 86 84 80 76 72 66 S22 mag 0.642 0.577 0.613 0.669 0.715 0.759 0.801 0.839 0.878 0.914 0.945 0.966 ang -85 -103 -116 -128 -139 -150 -161 -173 177 167 159 153 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 9/98 D1001UK +28V 15 Gate-Bias 10K L4 100nF 10nF 1nF 10uF 10nF 9 x 6 mm contact pad 10K L2 T3 10-30pF 16-100pF L3 D1001UK T4 L1 T1 T2 10-30pF 16-100pF 4.7pF 9 x 6mm contact pad D1001UK 175MHz TEST FIXTURE Substrate 1.6mm PTFE/glass, Er=2.5 All microstrip lines W=4.4mm T1 T2 T3 T4 10mm 13mm 12mm 4mm Semelab plc. L1 L2 L3 L4 1.5 turns 22swg enamelled copper wire, 6mm i.d. 10 turns 19swg enamelled copper wire, 6mm i.d. 1.5 turns 22swg enamelled copper wire, 6mm i.d. 13.5 turns 19swg enamelled copper wire on Siemens B64920A618X830 ferrite core Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 9/98