TetraFET D1029UK METAL GATE RF SILICON FET MECHANICAL DATA B C (2 pls) 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 350W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K • SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R PIN 2 PIN 4 DRAIN 1 GATE 2 • LOW Crss • SIMPLE BIAS CIRCUITS Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 438W 70V ±20V 35A –65 to 150°C 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.12/00 D1029UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current V VGS = 0 ID = 100mA VDS = 28V VGS = 0 7 mA 7 mA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 7A 70 1 5.6 S 13 dB 65 % 20:1 — TOTAL DEVICE GPS h VSWR Common Source Power Gain PO = 350W Drain Efficiency VDS = 28V Load Mismatch Tolerance f = 175MHz IDQ = 2A PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 420 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 210 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 17.5 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 0.4°C / W Prelim.12/00 D1029UK 3RXW : *DLQ 3RXW G% : I 0+] ,GT $ 9GV 9 3LQ: 'UDLQ(IILFLHQF\ I 0+] ,GT $ 9GV 9 3RXW 'UDLQ(IILFLHQF\ 3LQ: 3RXW JDLQ Figure 1 Output Power and Gain vs. Input Power Figure 2 Output Power and Efficiency vs. Input Power OPTIMUM SOURCE AND LOAD IMPEDANCE ,0' G%F 9GV 9 ,GT $ I 0+] I 0+] Frequency MHz ZS ZL 175 2.1 + j1.9 2.8 + j2.4 225 1.8 - j0.5 2.9 + j0.7 W W 3RXW:3(3 Figure 3 IMD3 vs. Output Power Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.12/00 D1029UK L 2 2 8 V 1 0 k G a te -B ia s 1 0 0 n 1 n T 2 1 2 1 0 0 k L 1 D 1 0 2 9 U K 1 n 1 n 1 0 0 n 1 0 0 0 u T 4 8 2 0 K 6 8 0 p F T 6 1 u T 1 2 -1 8 p F 9 0 p F 4 7 p F 2 -1 8 p F 6 8 0 p F 1 u T 5 T 3 D 1 0 2 9 U K 175MHz Test Fixture T1, 2, 3, 7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens A1 x 1 2 hole core T4,5 14cm Storm Products EXE18 19/30 S1TW coaxial cable T6 11cm Storm Products EXE18 19/30 S1TW coaxial cable L1 6 turns 1.2mm dia wire, 5mm internal diameter L2 1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.12/00