SEMIHOW KSH772

KSH772
2
KSH772
◎ SEMIHOW REV.A2,Mar 2008
KSH772
2
KSH772
Audio Frequency Power Amplifier
- Low Speed Switching
- Complement to KSH882
Absolute Maximum Ratings
3 Amperes
PNP Epitaxial Silicon Transistor
1 Watts
TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
-40
-30
30
-5
-3
-7
-0.6
10
1
150
-55~150
V
V
V
A
A
A
W
W
℃
℃
Collector-Base Voltage
Collector-Emitter
Collector
Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
*Collector Current(Pulse)
Base Current(DC)
Collector Dissipation(Tc=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
TO-126
1. Emitter
2. Collector
3. Base
1
2
3
*Plus Width≤10ms, Duty≤50%
Electrical Characteristics
CHARACTERISTICS
TC=25℃ unless otherwise noted
SYMBOL
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB= -30V,IE=0
-1
㎂
Emitter Cut-off Current
IEBO
VEB= -3V,IC=0
-1
㎂
*DC Current Gain
hFE1
hFE2
VCE= -2V,IC= -20mA
VCE= -2V,I
2V,IC= -1A
1A
30
60
220
160
400
*Collector-Emitter Saturation Voltage
VCE(sat)
IC= -2A,IB= -0.2mA
-0.3
-0.5
V
*Base-Emitter Saturation Voltage
VBE(sat)
IC= -2A,IB= -0.2mA
-1.0
-2.0
V
Current Gain Bandwidth Product
fT
VCE= -5V,IC= -0.1A
80
㎒
VCB= -10V,IE=0
F=1MHz
55
㎊
Output Capacitance
Cob
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
hFE2
Classification
Package Mark information.
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
G
250 ~ 500
S
S YWWH Y
K S H 77 2
YWW
SemiHow Logo
Y; year code, WW; week code
H
Assembly code
Y
hFE2 Classification
◎ SEMIHOW REV.A2,Mar 2008
KSH772
2
Typical Characteristics
◎ SEMIHOW REV.A2,Mar 2008
KSH772
2
Typical Characteristics ( Continued )
◎ SEMIHOW REV.A2,Mar 2008
KSH772
2
Package Dimension
TOTO
-126
8.5max
0.2
2.8max
12max
3.8±0.2
±
.2
3
φ
13max
1.2±0.2
2.5±0.2
1 27typ
1.27typ
0.78±0.08
2.3max
0.5±0.1
2.3max
Dimensions in Millimeters
◎ SEMIHOW REV.A2,Mar 2008