MCL245 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Fast switching diode • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage VRM 250 V Mean Rectified Current IO 200 mA IFM 625 mA IFSM 1000 mA Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Half Wave Rectification with Resistance o load at Tamb = 25 C and f/50 HZ Maximum Forward Current o Surge Forward Current at t<1s and Tj = 25 C 1) C C Valid provided that electrodes are kept at ambient temperature SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/08/2002 MCL245 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1.5 V IR - - 10 μA VBR 250 - - V Ctot - - 3 pF trr - - 75 ns Forward Voltage at IF = 200mA Leakage Current at VR = 220V Reverse Breakdown Voltage tested with 100uA Pulses Capacitance at VF = VR = 0, f = 1MHz Reverse Recovery Time From IF = IR = 20mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/08/2002