BAV70W SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Fast switching diode • Ultra small surface mount package 3 1 2 Marking Code: A4 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF 175 100 mA IFRM 500 mA IFSM 4 1 0.5 A Power Dissipation Ptot 200 mW Junction Temperature TJ 150 O Storage Temperature Range Ts - 65 to + 150 O Continuous Forward Current Single diode loaded Double diode loaded Repetitive Peak Forward Current Non-Repetitive Peak Forward Current at t = 1 µs at t = 1 ms at t = 1 s C C Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Symbol Min. Max. Unit VBR(R) 75 - V - 0.715 0.855 1 1.25 - 30 2.5 60 100 nA µA µA µA Ctot - 2 pF trr - 4 ns Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF Reverse Leakage Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 10 mA, Irr = 0.1 IR, RL = 100 Ω V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/05/2007 BAV70W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/05/2007