LL4148 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4148 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 IFSM 500 Rectified Current (Average) Half Wave Rectification with Resist. Load o at Tamb = 25 C and f50 HZ o Surge Forward Current at t<1s and Tj = 25 C Power Dissipation Junction Temperature Storage Temperature Range 1) 1) 1) mA mA Ptot 500 Tj 175 O -65 to +175 O TS mW C C Valid provided that electrodes are kept at ambient temperature. SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/07/2004 LL4148 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1 V IR IR IR - - 25 5 50 nA µA µA V(BR)R 100 - - V Capacitance at VF = VR = 0 Ctot - - 4 pF Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time<30ns, fp = 5 to 100 kHz Vfr - - 2.5 V Reverse Recovery Time from IF = 10mA to IR = 1mA, VR = 6V, RL = 100Ω trr - - 4 ns Thermal Resistance Junction to Ambient Air RthA - - 0.351) K/mW Rectification Efficiency at f = 100MHz, VRF = 2V ηv 0.45 - - - Forward Voltage at IF = 10mA Leakage Current at VR = 20V at VR = 75V at VR = 20V, Tj = 150oC Reverse Breakdown Voltage tested with 100µA Pulses Vo 2nF 5K ~ ~ ~ VRF =2V Valid provided that electrodes are kept at ambient temperature. 60 1) Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/07/2004 LL4148 Dynamic forward resistance versus forward current Forward characteristics 10 LL 4148 LL 4148 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 0 1 2V 1 10 -1 10 -2 1 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that electrodes are kept at ambient temperature mW 1000 LL 4148 LL 4148 Tj=25 oC f=1MHz 900 1.1 800 P tot 10 2 mA 10 Ctot(VR ) Ctot(0V) 700 1.0 600 500 0.9 400 300 0.8 200 0.7 100 0 0 o 200 C 100 0 0 2 Tamb 4 8 6 10 V VR SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/07/2004 LL4148 Leakage current versus junction temperature nA 10 4 LL 4148 5 2 10 3 IR 5 2 10 2 5 2 10 5 VR=20V 2 1 0 200 oC 100 Tj Admissible repetitive peak forward current versus pulse duration Valid provided that electrodes are kept at ambient temperature A 100 LL 4148 v=tp/T I 5 4 3 IFRM 2 tp 10 t v=0 IFRM T=1/fp 5 4 3 T 0.1 2 0.2 1 0.5 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/07/2004