MMBD142W SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications • for switching circuits 1 Absolute Maximum Ratings (Ta = 25 OC) Parameter 2 Marking Code: D3 Symbol Value Unit Peak Reverse Voltage VRM 80 V Reverse Voltage VR 80 V Forward Current IF 100 mA Peak Forward Current IFM 225 mA Non-repetitive Peak Forward Surge Current (t = 1 s) IFSM 500 mA Junction Temperature TJ 150 O Storage Temperature Range Ts - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 100 mA VF - 1.2 V Reverse Current at VR = 75 V IR - 0.1 µA Reverse Voltage at IR = 100 µA VR 80 - V Terminal Capacitance at VR = 0, f = 1 MHz Ct - 15 pF Reverse Recovery Time at IF = 10 mA, VR = 6 V, Irr = 0.1 • IR, RL = 100 Ω trr - 10 ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/10/2007 MMBD142W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/10/2007