ST 2N6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage VCBO 350 V Collector Emitter Voltage VCEO 350 V Emitter Base Voltage VEBO 6 V Collector Current IC 500 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2N6517 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit at VCE=10V, IC=1mA hFE 20 - - - at VCE=10V, IC=10mA hFE 30 - - - at VCE=10V, IC=30mA hFE 30 - 200 - at VCE=10V, IC=50mA hFE 20 - 200 - at VCE=10V, IC=100mA hFE 15 - - - BVCBO 350 - - V BVCEO 350 - - V BVEBO 6 - - V ICBO - - 50 nA IEBO - - 50 nA Ccb - - 6 pF at IC=10mA, IB=1mA VBE(sat) - - 0.75 V at IC=20mA, IB=2mA VBE(sat) - - 0.85 V at IC=30mA, IB=3mA VBE(sat) - - 0.9 V at IC=10mA, IB=1mA VCE(sat) - - 0.3 V at IC=20mA, IB=2mA VCE(sat) - - 0.35 V at IC=30mA, IB=3mA VCE(sat) - - 0.5 V at IC=50mA, IB=5mA VCE(sat) - - 1 V VBE(on) - - 2 V fT 40 - 200 MHz DC Current Gain Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=250V Emitter Cutoff Current at VEB=5V Collector Base Capacitance at VCB=20V, f=1MHz Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage at VCE=10V, IC=100mA Current Gain Bandwidth Product at VCE=20V, IC=10mA, f=20MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002