SEMTECH_ELEC ST2N6517

ST 2N6517
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 oC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
350
V
Collector Emitter Voltage
VCEO
350
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
500
mA
Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2N6517
Characteristics at Tamb=25 oC
Symbol
Min.
Typ.
Max.
Unit
at VCE=10V, IC=1mA
hFE
20
-
-
-
at VCE=10V, IC=10mA
hFE
30
-
-
-
at VCE=10V, IC=30mA
hFE
30
-
200
-
at VCE=10V, IC=50mA
hFE
20
-
200
-
at VCE=10V, IC=100mA
hFE
15
-
-
-
BVCBO
350
-
-
V
BVCEO
350
-
-
V
BVEBO
6
-
-
V
ICBO
-
-
50
nA
IEBO
-
-
50
nA
Ccb
-
-
6
pF
at IC=10mA, IB=1mA
VBE(sat)
-
-
0.75
V
at IC=20mA, IB=2mA
VBE(sat)
-
-
0.85
V
at IC=30mA, IB=3mA
VBE(sat)
-
-
0.9
V
at IC=10mA, IB=1mA
VCE(sat)
-
-
0.3
V
at IC=20mA, IB=2mA
VCE(sat)
-
-
0.35
V
at IC=30mA, IB=3mA
VCE(sat)
-
-
0.5
V
at IC=50mA, IB=5mA
VCE(sat)
-
-
1
V
VBE(on)
-
-
2
V
fT
40
-
200
MHz
DC Current Gain
Collector Base Breakdown Voltage
at IC=100μA
Collector Emitter Breakdown Voltage
at IC=1mA
Emitter Base Breakdown Voltage
at IE=10μA
Collector Cutoff Current
at VCB=250V
Emitter Cutoff Current
at VEB=5V
Collector Base Capacitance
at VCB=20V, f=1MHz
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Base Emitter On Voltage
at VCE=10V, IC=100mA
Current Gain Bandwidth Product
at VCE=20V, IC=10mA, f=20MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002