ST 2SD655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, D, E and F, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5 V IC 700 mA ic(peak) 1000 mA Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Collector Current Collector Peak Current Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SD655 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group D hFE 250 - 500 - E hFE 400 - 800 - F hFE 600 - 1200 - V(BR)CBO 30 - - V V(BR)CEO 15 - - V V(BR)EBO 5 - - V ICBO - - 1 μA VBE - - 1 V VCE(sat) - 0.15 0.5 V fT - 250 - MHz DC Current Gain at VCE=1V, IC=150mA Collector to Base Breakdown Voltage at IC=10μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Base Emitter Voltage at VCE=1V, IC=150mA Collector Emitter Saturation Voltage at IC=500mA, IB=50mA Gain Bandwidth Product at VCE=1V, IC=150mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002