ST 2SA933 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and S, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Power Dissipation Ptot 300 mW Junction Temperature Tj 125 O Storage Temperature Range TS -65 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SA933 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 120 - 270 - Y hFE 180 - 390 - S hFE 270 - 560 - -V(BR)CBO 50 - - V -V(BR)CEO 40 - - V -V(BR)EBO 5 - - V -ICBO - - 0.5 μA -IEBO - - 0.5 μA -VCE(sat) - 0.1 0.5 V fT - 140 - MHz COB - 4 5 pF DC Current Gain at -VCE=6V, -IC=1mA Collector Base Breakdown Voltage at -IC=50μA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=50μA Collector Cutoff Current at -VCB=30V Emitter Cutoff Current at -VEB=4V Collector Saturation Voltage at -IC=50mA, -IB=5mA Gain Bandwidth Product at -VCE=12V, -IC=2mA Output Capacitance at -VCB=12V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002