ST 2SC1740 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups Q, R, S and E. according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation Ptot 300 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC1740 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Q hFE 120 - 270 - R hFE 180 - 390 - S hFE 270 - 560 - E hFE 390 - 820 - V(BR)CBO 60 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V ICBO - - 0.1 μA IEBO - - 0.1 μA VCE(sat) - - 0.4 V fT - 180 - MHz COB - 2 3.5 pF DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown Voltage at IC=50μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=50μA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, IC=2mA Output Capacitance at VCB=12V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002