ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Value Unit Collector Base Voltage -VCBO 35 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Base Current -IB 100 mA Power Dissipation Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SA1270 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y hFE 70 - 140 - hFE 120 - 240 - O hFE 25 - - - Y hFE 40 - - - -ICBO - - 0.1 μA -IEBO - - 0.1 μA -VCEsat - 0.1 0.25 V -VBE - 0.8 1.0 V fT - 200 - MHz COB - 13 - pF at -VCE=6V, -IC=400mA Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VEB=5V Collector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002