ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25℃) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Base Current IB 30 mA Collector Current IC 150 mA Power Dissipation Ptot 400 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC732 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 200 - 400 - hFE 350 - 700 - VBE - 0.65 - V ICBO - - 0.1 μA IEBO - - 0.1 μA VCE(sat) - - 0.3 V fT - 150 - MHz COB - 2 - pF NF(1) - 0.5 6 V NF(2) - 0.2 3 V DC Current Gain at VCE=6V, IC=2mA Current Gain Group G L Base-Emitter Voltage at VCE=6V,IC=2mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=10mA, IB=1mA Gain Bandwidth Product at VCE=6V, IC=1mA Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA f=100Hz, RG=10KΩ Noise Figure at VCE=6V, IC=0.1mA f=1KHz, RG=10KΩ SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002