ST 2SC5345 NPN Silicon Epitaxial Planar Transistor RF amplifier applications. The transistor is subdivided into three groups, R, O and Y. according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 4 V IC 20 mA Collector Dissipation Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Collector Current C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :30/03/2004 ST 2SC5345 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit R hFE 40 - 80 - O hFE 70 - 140 - Y hFE 120 - 240 - VCBO 30 - - V VCEO 20 - - V VEBO 4 - - V ICBO - - 0.5 μA IEBO - - 0.5 μA VCE(sat) - - 0.3 V fT - 550 - MHz COB - 1.4 - pF DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=4V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=6V, IE=-1mA Collector Output Capacitance at VCB=6V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :30/03/2004