ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1 Dimensions in mm Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage VR 20 V Average Rectified Output Current IO 50 mA Peak Forward Current IFM 150 mA Surge Forward Current Isurge 500 mA Junction Temperature Tj 175 O Storage Temperature Range TS - 55 to + 175 O C C Characteristics at Ta = 25 OC Symbol Min. Max. Unit IF 4 - mA IR - 50 100 µA Junction Capacitance at f = 1 MHz, V = -1 V C - 1 pF Rectification efficiency at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz η 55 - % Parameter Forward Current at VF = 1 V Reverse Current at VR = 10 V ST60P ST60S output 5K 20PF ~ ~ ~ Input 2Vrms Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007