1SS244 SILICON EPITAXIAL PLANAR DIODE High voltage switching Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 250 V Reverse Voltage VR 220 V Mean Rectifying Current IO 200 mA Peak Forward Current IFM 625 mA Surge Current (1 s) Isurge 1 A Power Dissipation Ptot 300 mW Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 175 O Symbol Max. Unit Forward Voltage at IF = 200 mA VF 1.5 V Reverse Current at VR = 220 V IR 10 µA Capacitance between Terminals at f = 1 MHz CT 3 pF Reverse Recovery Time at IR = 20 mA, IF = 20 mA, RL = 50 Ω trr 75 ns C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 1SS244 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007