SEMTECH_ELEC 1SS244

1SS244
SILICON EPITAXIAL PLANAR DIODE
High voltage switching
Max. 0.45
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
XXX
Max. 2.9
Min. 27.5
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
250
V
Reverse Voltage
VR
220
V
Mean Rectifying Current
IO
200
mA
Peak Forward Current
IFM
625
mA
Surge Current (1 s)
Isurge
1
A
Power Dissipation
Ptot
300
mW
Junction Temperature
Tj
175
O
Storage Temperature Range
TS
- 65 to + 175
O
Symbol
Max.
Unit
Forward Voltage
at IF = 200 mA
VF
1.5
V
Reverse Current
at VR = 220 V
IR
10
µA
Capacitance between Terminals
at f = 1 MHz
CT
3
pF
Reverse Recovery Time
at IR = 20 mA, IF = 20 mA, RL = 50 Ω
trr
75
ns
C
C
Characteristics at Ta = 25 OC
Parameter
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007
1SS244
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007