1SS83 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Diode Max. 0.5 Features • High reverse voltage (VR = 250 V) • High reliability with glass seal Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 300 V Reverse Voltage VR 250 V Average Forward Current IO 200 mA Peak Forward Current IFM 625 mA Non-Repetitive Peak Forward Surge Current (at t = 1 s) IFSM 1 A Power Dissipation Ptot 400 mW Junction Temperature TJ 175 O Storage Temperature Range Tstg - 65 to + 175 O C C Electrical Characteristics at Ta = 25 OC Symbol Typ. Max. Unit Forward Voltage at IF = 100 mA VF - 1 V Reverse Current at VR = 250 V at VR = 300 V IR - 0.2 100 µA Total Capacitance at VR = 0 V, f = 1 MHz CT 1.5 - pF Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω trr - 100 ns Parameter SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007