1N-SS119 SILICON EPITAXIAL PLANAR DIODE for High Speed Switching Max. 0.45 Min. 27.5 Max. 1.9 Features • Low capacitance Black Cathode Band • Short reverse recovery time Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 35 V Reverse Voltage VR 30 V Average Rectified Current IO 150 mA Peak Forward Current IFM 450 mA Non-Repetitive Peak Forward Surge Current (t = 1 s) IFSM 1 A Power Dissipation Pd 250 mW Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 175 O Symbol Max. Unit Forward Voltage at IF = 10 mA VF 0.8 V Reverse Current at VR = 30 V IR 0.1 µA Capacitance at VR = 1 V, f = 1 MHz C 3 pF Reverse Recovery Time at IF = 10 mA VR = 6 V,RL = 50 Ω trr 3.5 ns C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 1N-SS119 Fig.2- Reverse current Vs. Reverse voltage Fig.1-Forward current Vs. Forward voltage 10 10 -1 -4 Reverse current I R (A) Ta=-2 o 5 C 10 -2 Ta=1 o 25 C T a= o 75 C Ta=25 o C Forward current I F (A) 10 -5 10-6 Ta=125 oC o Ta=75 C 10 -7 10 -3 o 10 -8 10 -4 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -9 0 Ta=25 C 10 20 30 40 50 Reverse voltage V R (V) Forward votlage V F (V) Fig.3- Capacitance Vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 0.1 1.0 10 100 Reverse voltage V R (V) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007