2SB065040MLJY 2SB065040MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB065040MLJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø Low forward voltage drop; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching La Ø Chip Topography and Dimensions La: Chip Size: 650µm; Lb: Pad Size: 580µm; power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:650µm X 650µm; Ø Chip Thickness: 155±20um ORDERING SPECIFICATIONS Product Name Specification 2SB065040MLJY For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Symbol Ratings Unit Maximum Repetitive Peak Reverse Voltage VRRM 40 V Average Forward Rectified Current IFAV 0.5 A Peak Forward Surge [email protected] IFSM 5.5 A TJ 125 °C TSTG -40~125 °C Maximum Operation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol Test Conditions Min. Max. Unit VBR IR=20µA 40 -- V VF1 IF=500mA -- 0.51 V VF2 IF=1A -- 0.62 V VR=40V -- 20 µA IR HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.09.13 Page 1 of 1