2SB053020MTJY 2SB053020MTJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB053020MTJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø Low forward voltage drop; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching La Ø Chip Topography and Dimensions La: Chip Size: 530µm; Lb: Pad Size: 420µm; power suppliers, polarity protection circuits and other electronic circuits; ORDERING SPECIFICATIONS Ø Chip Size:530µm X 530µm; Ø Chip Thickness: 155±20um Ø Gross die:39000 Die/Wafer(5 inch) Product Name Specification 2SB053020MTJY For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Symbol Ratings Unit Maximum Repetitive Peak Reverse Voltage VRRM 20 V Average Forward Rectified Current IFAV 0.5 A Peak Forward Surge [email protected] IFSM 6.5 A TJ 125 °C TSTG -40~125 °C Maximum Operation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol Test Conditions Min. Max. Unit VBR IR=150uA 20 -- V VF1 IF=100mA -- 0.375 V VF2 IF=500mA -- 0.44 V IR1 VR=10V -- 40 uA IR2 VR=20V -- 150 uA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.10.24 Page 1 of 1