BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R G T2 T1 T2 G T1 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt IGM PG(AV) Tstg Tj Parameter Value Unit RMS on-state current (full sine wave) TO-220AB Tc = 110°C 8 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 84 80 A 36 A²s I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < tp = 10 ms Peak gate current F = 120 Hz Tj = 125°C 50 A/µs tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate p ower diss ipation Storage junction temperature range Operating junction temperature range ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol IGT (1) VGT Test Conditions VD = 12 V VGD VD = VDRM IH (2) IT = 100 mA IL IG = 1.2 IGT Quadrant RL = 30 Ω RL = 3.3 kΩ Tj = 125°C BTA/BTB 35 50 mA MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V I - III VD = 67 % VDRM gate open Tj = 125°C (dI/dt)c (2) Without snubber BW I - II - III MAX. 35 50 mA MAX. 50 70 mA 60 80 MIN. 400 1000 V/µs MIN. 4.5 7 A/ms II dV/dt (2) Unit CW Tj = 125°C BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) ■ STANDARD (4 Quadrants) Symbol Test Conditions IGT (1) Quadrant RL = 30 Ω VD = 12 V VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT RL = 3.3 Ω Unit I - II - III IV MAX. 50 100 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 50 mA MAX. 50 VGT VGD Value Tj = 125°C I - III - IV II mA 100 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c =3.5 A/ms Tj = 125°C MIN. 400 V/µs MIN. 10 V/µs STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 11 A Vto (2) tp = 380 µs Value Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 50 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.6 °C/W Rth(j-a) Junction to ambient 60 °C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type Package 50 mA Standard TO-220AB Weight Base quantity Packing mode 2.3 g 250 Bulk 200 V ~~ 1000 V BTB/BTA08 X X OTHER INFORMATION Part Number BTB/BTA08 Marking BTB/BTA08 BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s ta te current (full cycle). F ig. 2-1: R MS on-s tate current vers us cas e temperature (full cycle). P (W) 10 9 8 7 6 5 4 3 2 1 0 IT (R MS ) (A ) IT (R MS )(A ) 0 1 2 3 4 5 6 7 8 F ig. 2-2: R MS on-s tate current vers us ambient temperature (printed circuit board F R 4, copper thicknes s : 35µm ),full cycle. 10 9 8 7 6 5 4 3 2 1 0 BTB B TA T c (° C ) 0 25 50 75 100 125 F ig. 3: R ela tive variation of thermal impedance vers us puls e duration. IT (R MS ) (A ) K =[Zth/R th] 3.5 1E +0 3.0 Zth(j-c) D 2 PA K (S =1c m 2 ) 2.5 1E -1 DPA K (S =0.5c m 2 ) 2.0 Zth(j-a) 1.5 1E -2 1.0 0.5 0.0 Tamb(° C ) 0 25 F ig. 4: values ). 50 O n-s tate 75 100 chara cteris tics 125 (ma ximum T j=T j max T j max. V to = 0.85 V R d = 50 m T j=25° C V T M(V ) 1.0 1E -1 1E +0 1E +1 1E +2 5E +2 IT S M (A ) 10 1 0.5 1E -2 F ig. 5: S urge peak on-s tate current versus number of cycles. IT M (A ) 100 tp(s ) 1E -3 1E -3 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 90 80 70 60 50 40 30 20 10 0 t=20ms One cycle Non repetitive T j initial=25° C R epetitive T c=100° C Number of cycles 1 10 100 1000 BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F ig. : 6 Non-repetitive s urge peak on-s tate current for a s inus oida l puls e with width tp < 10ms, a nd corres ponding value of I²t. F ig. 7: R elative va riation of gate trigger current, holding current and la tching current versus junction temperature (typical va lues ). IG T,IH,IL [T j] / IG,IH,IL T [T j=25°C ] IT S M (A ),I²t (A ²s ) 1000 2.5 T j initial=25°C 2.0 IG T dI/dt limitation: 50A /µs IT S M 1.5 100 IH & IL 1.0 I²t 0.5 tp (ms ) 10 0.01 0.10 T j(°C ) 1.00 10.00 F ig. -2: 8 R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typical values ). S tandard Types 0.0 -40 0 20 40 60 80 100 120 140 F ig. : 9 R elative varia tion of critical rate of decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 6 2.0 1.8 5 1.6 C 4 B 1.4 3 1.2 1.0 2 0.8 0.6 1 (dV /dt)c (V /µs ) 0.4 0.1 1.0 10.0 100.0 F ig. 01: DPAK and D 2PAK T hermal resis tance junction to ambient vers us copper s urface under tab (printed circuit board F R 4, copper thicknes s : 35 ∝m). R th(j-a) (°C /W) 100 90 80 70 60 50 40 30 20 10 0 -20 DPAK D²PAK S (c m²) 0 4 8 12 16 20 24 28 32 36 40 0 T j(°C ) 0 25 50 75 100 125 BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F ig. 6: Non-repetitive s urge peak on-s tate current for a s inus oida l puls e with width tp < 10ms, a nd corres ponding value of I²t. F ig. 7: R elative va riation of gate trigger current, holding current and la tching current versus junction temperature (typical va lues ). IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ] IT S M (A ), I² t (A ² s ) 1000 2.5 T j initial=25° C 2.0 IG T dI/dt limitation: 50A /µs IT S M 1.5 100 IH & IL 1.0 I² t 0.5 tp (ms ) 10 0.01 0.10 T j(° C ) 1.00 10.00 F ig. 8-1: R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typica l values ). S nubberles s & L ogic L evel Types (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.2 2.0 TW 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 (dV /dt)c (V /µs ) 0.2 0.0 0.1 1.0 10.0 0.0 -40 1.6 100 120 140 C 1.2 1.0 T 810/S W 0.8 0.6 100.0 (dV /dt)c (V /µs ) 0.4 0.1 1.0 10.0 100.0 F ig. 10: DPAK and D 2PAK T hermal resis tance junction to ambient vers us copper s urface under tab (printed circuit board F R 4, copper thicknes s : 35 ∝m). R th(j-a) (° C /W) 3 2 T j(° C ) 75 80 B 1.4 T 835/C W/B W 4 50 60 1.8 5 25 40 F ig. 8-2: R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typical values ). S tandard Types (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 0 20 (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 6 0 0 2.0 F ig. 9: R elative varia tion of critical rate of decreas e of main current vers us junction temperature. 1 -20 100 125 100 90 80 70 60 50 40 30 20 10 0 DPAK D² PAK S (c m² ) 0 4 8 12 16 20 24 28 32 36 40