BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R G T2 T1 T2 G T1 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter PG(AV) Tstg Tj Unit RMS on-state current (full sine wave) TO-220AB Tc = 105°C 10 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 105 100 A 55 A²s I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < tp = 10 ms VDSM/V RSM Non repetitive surge peak off-state voltage IGM Value Peak gate current F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate p ower diss ipation + 100 Storage junction temperature range Operating junction temperature range ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) ■ Symbol IGT (1) VGT Test Conditions VD = 12 V VGD VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT Quadrant RL = 33 Ω RL = 3.3 kΩ Tj = 125°C BTA/BTB 35 50 mA MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V I - III VD = 67 % VDRM gate open Tj = 125°C (dI/dt)c (2) Without snubber BW I - II - III MAX. 35 50 mA MAX. 50 70 mA 60 80 MIN. 500 1000 V/µs MIN. 5.5 9.0 A/ms II dV/dt (2) Unit CW Tj = 125°C BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) ■ STANDARD (4 Quadrants) Symbol Test Conditions IGT (1) Quadrant RL = 33 Ω VD = 12 V VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT RL = 3.3 Ω Unit I - II - III IV MAX. 50 100 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 50 mA MAX. 50 VGT VGD Value Tj = 125°C I - III - IV II mA 100 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c =4.4 A/ms Tj = 125°C MIN. 400 V/µs MIN. 10 V/µs STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 14 A Vto (2) tp = 380 µs Value Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 40 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.5 °C/W Rth(j-a) Junction to ambient 60 °C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type Package 50 mA Standard TO-220AB Weight Base quantity Packing mode 2.3 g 250 Bulk 200 V ~~ 1000 V BTBV/BTA10 X X OTHER INFORMATION Part Number BTB/BTA10 Marking BTB/BTA10 BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s ta te current (full cycle). F ig. 2: R MS on-state current vers us cas e temperature (full cycle). P (W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IT (R MS ) (A ) IT (R MS ) (A ) 0 1 2 3 4 5 6 7 8 9 10 F ig. 3: R elative variation of thermal impeda nce versus pulse duration. 1E +0 12 11 10 9 8 7 6 5 4 3 2 1 0 B TB B TA T c (°C ) 0 25 F ig. 4: values ). 50 On-s tate 75 100 cha racteris tics 125 (maximum IT M (A ) K =[Zth/R th] 100 1E -1 T j max T j max. V to = 0.85 V R d = 40 W m Zth(j-c ) 10 Zth(j-a) T j=25°C tp (s ) 1E -2 1E -3 1E -2 1E -1 V T M (V ) 1E +0 1E +1 1E +2 5E +2 F ig. 5: S urge peak on-state current vers us number of cycles . 1 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F ig. 6: Non-repetitive s urge pea k on-s tate current for a s inus oidal puls e with width tp < 10ms, and corres ponding value of I²t. IT S M (A ),I²t (A ²s ) IT S M (A ) 110 100 90 80 70 60 50 40 30 20 10 0 1.0 1000 T j initial=25°C t=20ms dI/dt limitation: 50A /µs One cycle Non repetitive T j initial=25°C IT S M 100 I²t R epetitive T c=95°C tp (ms ) Number of ycles c 1 10 100 1000 10 0.01 0.10 1.00 10.00 BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) F ig. 7: R ela tive variation of gate trigger current, holding current and latching current vers us junction temperature (typical values). 2.5 IG T,IH,IL [T j] / IG,IH,IL T [T j=25°C ] 2.0 1.4 1.5 B W/C W 1.0 0.8 0.6 T j(°C ) -20 0 20 40 60 80 100 120 140 F ig. 9: R elative varia tion of critical rate of decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 T j (°C ) 0 B 1.2 IH & IL 0.5 0 C 1.6 IG T 0.0 -40 (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 1.8 2.0 1.0 F ig. 8: R ela tive variation of critica l rate of decreas e of main current versus (dV /dt)c (typical values). 25 50 75 100 125 0.4 0.1 (dV /dt)c (V /µs ) 1.0 10.0 100.0