STMICROELECTRONICS BTA06

BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
G
T2
T1
T2
G
T1
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
Value
Unit
RMS on-state current (full sine wave)
TO-22 0AB
Tc = 100 °C
6
A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
63
60
A
21
A²s
I²t Value for fusing
Critical rate of rise of on-state current
_ 100 ns
I G = 2 x I GT , tr <
tp = 10 ms
Peak gate current
F = 120 Hz
Tj = 125°C
50
A/µs
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
■
Symbol
IGT (1)
VGT
Test Conditions
VD = 12 V
VGD
VD = VDRM
IH (2)
IT = 100 mA
IL
IG = 1.2 IGT
Quadrant
RL = 30 Ω
RL = 3.3 kΩ
Tj = 125°C
BTA/BTB
35
50
mA
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
I - III
VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
BW
I - II - III
MAX.
35
50
mA
MAX.
50
70
mA
60
80
MIN.
400
1000
V/µs
MIN.
3.5
5.3
A/ms
II
dV/dt (2)
Unit
CW
Tj = 125°C
BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
IGT (1)
Quadrant
RL = 30 Ω
VD = 12 V
VD = VDRM
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
RL = 3.3 Ω
Unit
I - II - III
IV
MAX.
50
100
mA
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
MAX.
50
mA
MAX.
50
VGT
VGD
Value
Tj = 125°C
I - III - IV
II
mA
100
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c =2.7 A/ms
Tj = 125°C
MIN.
400
V/µs
MIN.
10
V/µs
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM (2)
ITM = 5.5 A
Vto (2)
tp = 380 µs
Value
Unit
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
60
mΩ
IDRM
VDRM = VRRM
Tj = 25°C
5
µA
1
mA
IRRM
Tj = 125°C
MAX.
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
1.8
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Type
Package
50 mA
Standard
TO-220AB
Marking
Weight
Base
quantity
Packing
mode
BTB/BTA06
2.3 g
250
Bulk
200 V ~~ 1000 V
BTB/BTA06
X
X
OTHER INFORMATION
Part Number
BTB/BTA06
BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
F ig. : 2 R MS on-state current vers us cas e
temperature (full cycle).
P (W)
IT (R MS ) (A )
8
7
7
6
6
B TA
5
5
4
4
3
3
2
2
1
IT (R MS )(A )
1
0
BTB
0
1
2
3
4
5
6
F ig. :3 R elative variation of thermal impeda nce
versus pulse duration.
0
T c (°C )
0
25
F ig.
: 4On-s tate
values ).
75
100
1E +0
T j max.
V to = 0.85
V
R d = 60 Ωm
Zth(j-c)
1E -1
cha racteris tics
(maximum
T j=T j max
V T M(V )
tp(s )
1E -2
125
10
Zth(j-a)
1E -2
1E -3
100
IT M (A )
K =[Zth/R th]
1E -1
1E +0
1E +1
1E +2 5E +2
F ig. : 5 S urge peak on-state current vers us
number of cycles .
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
F ig.
: 6 Non-repetitive s urge pea k on-s tate
current for a s inus oidal puls e with width
tp < 10ms, and corres ponding value of I²t.
IT S M (A ),I²t (A ²s )
IT S M (A )
1000
70
60
T j initial=25°C
t=20ms
50
dI/dt limitation:
50A /µs
One cycle
IT S M
Non repetitive
T j initial=25°C
40
30
100
R epetitive
T c=105°C
20
I²t
10
0
50
tp (ms )
Number of ycles
c
1
10
100
1000
10
0.01
0.10
1.00
10.00
BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
F ig. 7: R ela tive variation of gate trigger current,
holding current and latching current vers us
junction temperature (typical values).
F ig. -1:
8 R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typical
values ). S nubberles s & Logic Level Types
IG T,IH,IL [T j] / IG,IH,IL
T
[T j=25°C ]
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.5
2.0
IG T
1.5
IH & IL
1.0
0.5
T j(°C )
0.0
-40
-20
0
20
40
60
80
100
120
140
F ig. -2:
8 R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ). S tandard Types
2.4
2.2
2.0
1.8
1.6
1.4 S W
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
B W/C W
(dV /dt)c (V /µs )
1.0
10.0
100.0
F ig. : 9 R elative variation of critical rate of
decreas e of main current vers us junction
temperature.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8 C
1.6
1.4
B
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
TW
6
5
4
3
2
1
(dV /dt)c (V /µs )
1.0
10.0
100.0
0
T j(°C )
0
25
50
75
100
125