SSDI SSR50C50

SSR50C60CT Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638-5223
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
50 Amp
SCHOTTKY SILICON CARBIDE
CENTERTAP RECTIFIER
Designer’s Data Sheet
Part Number / Ordering Information 1/
600 Volts
SSR50C __ __ __ __
│ │ │ └ Screening2/
__ = Not Screened
│ │ │
TX = TX Level
TXV = TXV
│ │ │
S = S Level
│ │ │
│ │ └ Package
│ │
M = TO-254
│ │
│ └ Configuration
│
CT = Centertap
└ Voltage
50 = 500 V
60 = 600 V
FEATURES:








World’s Smallest Hermetic SiC Centertap
Rectifier
High Voltage, 600V
Very High Operating Temperature, 250°C
No Recovery Time (tfr or trr)
High Current Operation, 50A
Hermetically Sealed, Isolated Power
Package
TX, TXV, and Space Level Screening
Available - Consult Factory
Lead Forming Available – Consult Factory
MAXIMUM RATINGS3/
Peak Repetitive Reverse and
Peak Surge Reverse Voltage
SSR50C50
SSR50C60
Symbol
Value
Units
VRRM
VRSM
500
600
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Per Leg
Total
IO
25
50
Amps
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave)
Per Leg
IFSM
100
Amps
PD
120
Watts
TOP & Tstg
-55 to +250
RθJC
1.9
Power Dissipation
(TC = 25°C)
Operating & Storage Temperature4/
Maximum Thermal Resistance
Junction to Ambient
Junction to Case
o
o
C
C/W
TO-254 (M)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0140B
DOC
SSR50C60CT Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638-5223
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS3/
Symbol
Min
Typ
Max
Units
IF = 12 A
IF = 25 A
VF1
––
1.25
1.60
1.40
1.90
Volts
IF = 12 A
IF = 25 A
VF2
––
1.30
1.70
1.50
2.00
Volts
IF = 12 A
IF = 25 A
VF3
––
1.25
1.50
1.40
1.90
Volts
Reverse Leakage Current
(VR = Rated VR, TJ = 25ºC, 300 sec pulse)
IR1
––
20
250
A
Reverse Leakage Current
(VR = Rated VR, TJ = 150ºC, 300 sec pulse)
IR2
––
50
1000
A
Junction Capacitance
(VR = 10Vdc, f = 1MHz, TC = 25oC)
CJ
––
400
––
pF
Total Capacitive Charge
(VR = 400Vdc, IF=5A, di/dt=200A/s, TJ=150 oC)
QC
––
50
––
nC
Instantaneous Forward Voltage Drop
(TJ=25ºC, 300sec pulse)
Instantaneous Forward Voltage Drop
(TJ=150ºC, 300sec pulse)
Instantaneous Forward Voltage Drop
(TJ=-55ºC, 300sec pulse)
NOTES:
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC
4/ If High temp operation is desired (>175°C), consult factory for soldering consideration.
Available Part Numbers: SSR50C50CTM, SSR50C60CTM
Ø.150
.139
.685
.665
.750
.500
PIN 3
.545
.535
2x .155
.145
PIN ASSIGNMENT
PIN 2
PIN 1
3x Ø.045
.035
Package
Pin 1
Pin 2
Pin 3
TO-254
Anode
Cathode
Anode
.545
.535
.270
.240
.050
.040
.155
.140
.800
.790
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0140B
DOC