SDR950M & Z Thru SDR952M & Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer’s Data Sheet 50A, 35nsec typ., 100-200 V Hyper Fast Rectifier Part Number/Ordering Information 1/ SDR950 __ __ __ ¦ ¦ ¦ ¦ ¦ ¦ ¦ + ¦ + Screening 2/ __ = Not Screened ¦ TX = TX Level ¦ TXV = TXV Level ¦ S = S Level ¦ + Leg Bend Option (See Figure 1) Features: • • • • • • • • Package M = TO-254, Z = TO-254Z • • Maximum Ratings Hyper Fast Recovery: 50nsec Maximum 3/ High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Higher Voltages and Faster Recovery Times Available, Contact Factory Ceramic Seal for Improved Hermeticity Available TX, TXV, and S-Level Screening Available 2/ Symbol SDR950M & Z SDR951M & Z SDR952M & Z Peak Repetitive Reverse Voltage Value 100 150 200 VRRM VRWM VR Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 5/ Units Volts Io 50 Amps IFSM 350 Amps Operating & Storage Temperature TOP & TSTG -65 to +200 ºC Maximum Total Thermal Resistance Junction to Case 4/ Rθ JC 0.85 ºC/W Peak Surge Current (8.3 ms Pulse, Half Sine Wave, or equivalent DC) - 4/ Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF =10 Amp, di/dt = 200A/µs 4/ Pins 2 and 3 Tied Together. 5/ TC = 150°C, Derate to 0A @ 200°C. - TO-254 (M) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. - TO-254Z (Z) DATA SHEET #: RH0039K DOC SDR950M & Z Thru SDR952M & Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Symbol Max Units TA = 25 ºC TA = 25 ºC VF1 VF2 1.00 1.25 VDC TA = -55 ºC VF3 1.35 VDC IR1 IR2 100 10 µA mΑ Reverse Recovery Time (IF =10 Amp, di/dt = 200A/µs) tRR 50 nsec Junction Capacitance (VR = 10VDC, T A = 25ºC, f = 1MHz) CJ 900 pF Instantaneous Forward Voltage Drop (IF = 25A, 300-500µsec Pulse) (IF = 50A, 300-500µsec Pulse) Instantaneous Forward Voltage Drop (IF = 50Adc, 300-500µsec Pulse) Reverse Leakage Current (300µsec Pulse Minimum) TA = 25 ºC, Rated VR TC = 100 ºC, 80% of Rated VR PIN ASSIGNMENT Figure 1- Optional Lead Bends Code Suffix MD & ZD FUNCTION Pin 1 Pin 2 Pin 3 Cathode Anode Anode Suffix MU & ZU TO-254 (Suffix M) Outline: TO-254Z (Suffix Z) Outline: Measured in Inches NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0039K DOC