Product Description SSW-108 Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. Product Features • High Isolation: 32dB at 2GHz • Low DC Power Consumption • Non-reflective • Broadband Performance - True DC Operation • Low Cost Small Outline Plastic Package Isolation vs. Frequency VControl = -5 V -20 -30 -40 dB -50 Applications • Analog/Digital Wireless System • Spread Spectrum • GPS -60 -70 DC 1 2 3 4 GHz Sym bol P a r a m e te r s : T e s t C o n d itio n s U n its M in . Ty p . M ax. 0 .8 0 .9 1 .4 1 .3 1 .4 In s In s e r tio n L o s s f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z dB dB dB Is o l Is o la tio n f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z dB dB dB VSW R on In p u t & O u tp u t V S W R ( o n o r lo w lo s s s ta te ) f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z 1 .1 5 1 .2 5 1 .5 0 V S W R o ff In p u t & O u tp u t V S W R ( o ff o r is o la t e d s t a t e ) f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z 1 .1 5 1 .2 5 1 .5 0 P1dB O u tp u t P o w e r a t 1 d B C o m p r e s s io n f= 0 .5 -4 .0 G H z V = -5 V V = -8 V dBm dBm +26 +29 T O IP T h ir d O r d e r In te r c e p t P o in t f= 0 .5 -4 .0 G H z V = -5 V V = -8 V dBm dBm +45 +48 uA 40 nsec 3 Id Is w D e v ic e C u r r e n t S w itc h in g S p e e d 5 0 % c o n tro l to 1 0 % /9 0 % R F 30 22 40 35 25 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7-5 http://www.stanfordmicro.com Switches Electrical Specifications at Ta = 25C SSW-108 DC-4 GHz Absorptive SPDT GaAs Switch Truth Table Absolute Maximum Ratings RF Input P ower 2W Max> 500MHz C on tr o l Vol t ag e -10V Operating Te m p e r a t u r e -45C to +85C Storage Te m p e r a t u r e -65C to +150C Thermal Res istance 20 deg C/W V1 V2 J1-J2 J1-J3 0 -5 Low Loss Isolation -5 0 Isolation Low Loss Switch Schematic Pin Out Pi n F un ct i on 1 GN D 2 J1 3 GN D 4 GN D 5 J2 6 V1 7 V2 8 J3 Switches On Port Input/Output VSWR vs. Frequency VControl = -5 V Insertion Loss vs. Frequency VControl = -5 V 2.0 0.0 1.8 -0.5 1.6 dB -1.0 1.4 -1.5 1.2 1.0 -2.0 DC 1 2 3 DC 4 522 Almanor Ave., Sunnyvale, CA 94086 1 2 3 4 GHz GHz Phone: (800) SMI-MMIC 7-6 http://www.stanfordmicro.com