EMS101-P1 DC – 6 GHz GaAs MMIC SPDT SWITCH ISSUED DATE: 10-21-03 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY Description The EMA101-P is a GaAs IC single pole double throw broadband RF switch. It can be used for broadband communications and instrument application. This device is packaged in a SO-8 surface mount package and internally it can be terminated with 50ohm load or short circuit based on requirement .The switch is controlled by the application of 0V/-5V signals to the control lines in accordance with the truth table below. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOL F P1dB PARAMETERS/TEST CONDITIONS Operating frequency Range Input Power at 0/-5V Control; 50MHz 1dB Gain compression 0/-5V Control; 2GHz Ls Insertion Loss (DC-3GHz) (3-6GHz) ISO Isolation (DC-3GHz) (3-6GHz) Input VSWR VSWR in VSWR out Output VSWR T Note: 1. 2. 3. MIN DC Switching Speed (50% control to 10%/90%RF) TYP MAX 6 20 26 1 1.5 30 25 1.8 1.8 3 UNIT GHz dBm 1.5 2 32 28 dBm dB dB dB dB 8 nS VSWR measured in low loss switch state P1dB measured input power at which insertion loss compressed by 1dB All measurement made in a 50Ohm system Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com EMS101-P1 DC – 6 GHz GaAs MMIC SPDT SWITCH Package Outline Electrical Schematic V1 RFOUT1 R T RFIN V2 RFOUT2 R T Ground R: Reflective Ground T: Terminated Pin Description Pin 1 2 3 4 5 6 7 8 Function Ground RF IN Ground Ground RF OUT1 Control V2 Control V1 RF OUT2 Switch Diagram V1 0V -5V V2 -5V 0V RFIN-RFOUT1 Low Loss Isolated RFIN-RFOUT2 Isolated Low Loss Absolute maximum Rating RF input power Operating temperature Storage temperature 31dBm -40oC to +85oC -65oC to 150oC Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com