ETC SGA-6586

Preliminary
Product Description
SGA-6586
Stanford Microdevices’ SGA-6586 is a high performance
cascadeable 50-ohm amplifier housed in an low-cost
surface-mountable plastic package. Designed for
operation at voltages as low as 5.0V, this RFIC uses the
latest Silicon Germanium Heterostructure Bipolar Transistor
(SiGe HBT) process featuring 1 micron emitters with FT up
to 50 GHz.
DC-2500 MHz Silicon Germanium
HBT Cascadeable Gain Block
This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-6586 requires only DC
blocking and bypass capacitors for external components.
Small Signal Gain vs. Frequency
Product Features
• DC-2500 MHz Operation
• Single Voltage Supply
• High Output Intercept: +34.0 dBm typ. at
850 MHz
35
30
•
•
•
25
dB
20
15
High Output Power : 21.5 dBm typ. at 850 MHz
High Gain : 24.0 dB typ. at 850 MHz
Internally Matched to 50 Ohms Input & Output
10
5
Frequency MHz
Symbol
6000
5000
4000
3000
2000
1000
100
0
Applications
• Oscillator Amplifiers
• Final PA for Low Power Applications
• IF/ RF Buffer Amplifier
• Drivers for CATV Amplifiers
Parameters: Test Conditions:
Z0 = 50 Ohms, Id = 80 mA, T = 25ºC
Units
P 1dB
Output Power at 1dB Compression
f = 850 MHz
f = 1950 MHz
S 21
Small Signal Gain
S 12
Reverse Isolation
Min.
Typ.
dB m
dB m
21.5
18.1
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 2000 - 2500 MHz
dB
dB
dB
25.6
20.3
17.2
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 2000 - 2500 MHz
dB
dB
dB
27.8
23.3
20.2
S11
Input VSWR
f = DC - 2500 MHz
-
1.1:1
S 22
Output VSWR
f = DC - 2500 MHz
-
1.2:1
IP3
Third Order Intercept Point
Power out per tone = 3 dBm
f = 850 MHz
f = 1950 MHz
dB m
dB m
33.8
32.5
NF
Noise Figure
f = DC - 1000 MHz
f = 1000 - 2500 MHz
dB
dB
2.6
3.4
TD
Group Delay
f = 1000 MHz
pS
163
VD
Device Voltage
V
4.6
5.0
Max.
5.4
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101160 Rev B
Preliminary
SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier
Specification
Parameter
Device Bias
Operating Voltage
Operating Current
500 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
Min
Typ.
Test
Max.
Unit
Condition
T= 25C
4.6
5.0
80.0
5.4
V
mA
21.5
25.8
2.5
32.2
20.9
19.9
28.0
dB
dB
dB m
dB m
dB
dB
23.8
2.7
33.8
21.5
23.3
26.5
dB
dB
dB m
dB m
dB
dB
18.4
3.1
32.2
18.0
23.7
21.4
dB
dB
dB m
dB m
dB
dB
16.7
3.7
30.2
16.8
18.2
19.7
dB
dB
dB m
dB m
dB
dB
T= 25C
T= 25C
T= 25C
T= 25C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101160 Rev B
Preliminary
SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier
Pin #
1
Function
Description
RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor
chosen for the frequency of operation.
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
GND
Sames as Pin 2
2
3
4
Device Schematic
Application Schematic for Operation at 900 MHz
Recommended Bias Resistor Values
Supply
Voltage(Vs)
6V
8V
9V
12V
Rbias
(Ohms)
12
36
51
91
1uF
68pF
R bias
Vs
For 8V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
33nH
50 ohm
microstrip
50 ohm
microstrip
2
1
RF IN
RF OUT
3
100pF
100pF
4
Application Schematic for Operation at 1900 MHz
1uF
22pF
R bias
Vs
22nH
50 ohm
microstrip
50 ohm
microstrip
2
1
RF IN
RF OUT
3
68pF
68pF
4
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101160 Rev B
Preliminary
SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier
S21, Id =80mA, T=25C
40
0
30
-1 0
6000
6000
Frequency MHz
6000
-40
5000
-40
5000
-30
100
-30
5000
dB -20
4000
dB -20
3000
-10
2000
-10
1000
0
4000
S22, Id =80mA, T=25C
3000
S11, Id =80mA, T=25C
2000
Frequency MHz
1000
Frequency MHz
0
100
4000
100
6000
5000
4000
-4 0
3000
0
2000
-3 0
1000
10
3000
-2 0
2000
dB
1000
20
100
dB
S12, Id =80mA, T=25C
Frequency MHz
S22, Id=80mA, Ta=25C
S11, Id=80mA, Ta=25C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-101160 Rev B
Preliminary
SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier
S21, Id =80mA, T=-40C
S12, Id =80mA, T=-40C
40
0
30
-1 0
6000
100
Frequency MHz
6000
-40
5000
-40
5000
-30
6000
-30
5000
dB -20
4000
dB -20
3000
-10
2000
-10
1000
0
4000
S22, Id =80mA, T=-40C
3000
S11, Id =80mA, T=-40C
2000
Frequency MHz
1000
Frequency MHz
0
100
4000
100
6000
5000
4000
3000
-4 0
2000
0
1000
-3 0
100
10
3000
-2 0
2000
dB
1000
20
dB
Frequency MHz
S22, Id=80mA, Ta=-40C
S11, Id=80mA, Ta=-40C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101160 Rev B
Preliminary
SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier
0
-1 0
-1 0
Frequency MHz
4000
100
6000
5000
4000
-4 0
3000
-4 0
2000
-3 0
1000
-3 0
3000
-2 0
2000
dB
1000
-2 0
6000
S22, Id =80mA, T=85C
6000
S11, Id =80mA, T=85C
5000
6000
Frequency MHz
0
100
dB
Frequency MHz
5000
-4 0
4000
0
3000
-3 0
100
10
5000
dB -2 0
4000
dB 2 0
3000
-1 0
2000
30
1000
0
100
40
2000
S12, Id =80mA, T=85C
1000
S21, Id =80mA, T=85C
Frequency MHz
S22, Id=80mA, Ta=85C
S11, Id=80mA, Ta=85C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
6
http://www.stanfordmicro.com
EDS-101160 Rev B
Preliminary
SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier
Absolute Maximum Ratings
Parameter
Supply Current
Operating Temperature
Maximum Input Power
Storage Temperature Range
Operating Junction Temperature
Part Number Ordering Information
Value
Unit
Part Number
Reel Siz e
Devices/Reel
160
mA
SGA-6586
13"
3000
-40 to +85
C
+6
dB m
-40 to +150
C
+150
C
Caution:
Operation of this device above any one of these
parameters may cause permanent damage. Appropriate
precautions in handling, packaging and testing devices
must be observed.
Thermal Resistance (Lead-Junction):
97° C/W
Package Dimensions
Pin Designation
1
RF in
2
GND
3
RF out and Bias
4
GND
PCB Pad Layout
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
7
http://www.stanfordmicro.com
EDS-101160 Rev B