STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh™ Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD 600V <0.29Ω 20A 214W ■ High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge 3 1 TO-220FP TO-247 3 1 ■ Low gate input resistancE ■ Tight process control and high manufacturing yields 2 2 TO-220 Internal schematic diagram Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications ■ Switching application Order codes Part number Marking Package Packaging STF20NM60D F20NM60D TO-220FP Tube STP20NM60FD P20NM60FD TO-220 Tube STW20NM60FD W20NM60FD TO-247 Tube August 2006 Rev 4 1/15 www.st.com 15 Contents STF20NM60D - STP20NM60FD - STW20NM60FD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 9 STF20NM60D - STP20NM60FD - STW20NM60FD 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 VDS VDGR VGS ID IDM PTOT dv/dt 600 V Drain-gate voltage (RGS = 20 kΩ) 600 V Gate- source voltage ± 30 Drain current (continuous) at TC = 100°C (2) (3) TO-247 Drain-source voltage (VGS = 0) Drain current (continuous) at TC = 25°C ID TO-220FP 20 20 12.6 V (1) 12.6 80 (1) (1) 20 A 12.6 A 80 A Drain current (pulsed) 80 Total dissipation at TC = 25°C 192 45 214 W Derating factor 1.20 0.36 1.42 W/°C Peak diode recovery voltage slope VISO Insulation withstand voltage (DC) Tj Tstg Operating junction temperature Storage temperature 20 - V/ns 2500 - V °C °C – 65 to 150 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS Table 2. Thermal resistance Value Symbol Parameter Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max Tl Table 3. Symbol Maximum lead temperature for soldering purpose Unit TO-220 TO-220FP TO-247 0.65 2.8 0.585 °C/W 30 °C/W 62.5 300 °C Avalanche data Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 10 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 700 mJ 3/15 Electrical characteristics 2 STF20NM60D - STP20NM60FD - STW20NM60FD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min Typ Max Unit Drain-source breakdown voltage ID = 250µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ±30V ±10 0 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 10A V(BR)DSS Table 5. Symbol 600 3 V 4 Ω 0.26 0.29 Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS > ID(on) x RDS(on)max, ID = 10A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 Coss eq. (2) Equivalent output capacitance VGS = 0V, VDS = 0V to 480V Min Typ Max Unit 9 S 1300 500 35 pF pF pF 190 pF Ω RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 2.7 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480V, ID = 20A, VGS = 10V (see Figure 17) 37 10 17 52 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 4/15 STF20NM60D - STP20NM60FD - STW20NM60FD Table 6. Symbol Electrical characteristics Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 300V, ID = 10A RG = 4.7Ω VGS = 10V (see Figure 16) 25 12 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 480 V, ID = 20A, RG = 4.7Ω, VGS = 10V (see Figure 16) 8 22 30 ns ns ns Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Test conditions Min Typ. Source-drain current Source-drain current (pulsed) Max Unit 20 80 A A 1.5 V Forward on voltage ISD = 20 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, Tj = 25°C di/dt =100A/µs,VDD=60V (see Figure 21) 240 1800 16 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, Tj = 150°C di/dt =100A/µs,VDD=60V (see Figure 21) 396 2960 20 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 5/15 Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating areafor TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 6/15 STF20NM60D - STP20NM60FD - STW20NM60FD Electrical characteristics Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/15 Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics 8/15 STF20NM60D - STP20NM60FD - STW20NM60FD 3 Test circuit Test circuit Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/15 Package mechanical data 4 STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 10/15 STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/15 Package mechanical data STF20NM60D - STP20NM60FD - STW20NM60FD TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/15 TYP 5.50 0.216 STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 13/15 Revision history 5 STF20NM60D - STP20NM60FD - STW20NM60FD Revision history Table 8. 14/15 Revision history Date Revision Changes 09-Sep-2004 1 First release 21-Apr-2006 2 New template 25-Jul-2006 3 Modified part number 01-Aug-2006 4 Corrected unit on Table 5.: Dynamic STF20NM60D - STP20NM60FD - STW20NM60FD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15