STW54NM65ND N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh™ II Power MOSFET (with fast diode) Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A ■ The worldwide best RDS(on) * area amongst the fast recovery diode devices 2 3 1 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities TO-247 Application Figure 1. Internal schematic diagram Switching applications $ Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. ' 3 !-V Device summary Order code Marking Package Packaging STW54NM65ND 54NM65ND TO-247 Tube June 2011 Doc ID 018885 Rev 1 1/13 www.st.com 13 Contents STW54NM65ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 018885 Rev 1 STW54NM65ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 650 V VGS Gate- source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 49 A ID Drain current (continuous) at TC = 100 °C 31 A Drain current (pulsed) 196 A Total dissipation at TC = 25 °C 350 W Peak diode recovery voltage slope 40 V/ns - 55 to 150 °C 150 °C Value Unit 0.36 °C/W IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 49 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID= IAS, VDD = 50 V) 850 mJ Doc ID 018885 Rev 1 3/13 Electrical characteristics 2 STW54NM65ND Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 24.5 A V(BR)DSS Table 6. Symbol Ciss Coss Crss Coss eq.(1) Qg Qgs Qgd tc tr td(off) tf Rg 650 3 V 4 Ω 0.055 0.065 Dynamic Parameter Test conditions Min. Typ. Max. Unit - Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 6200 218 10 Output equivalent capacitance VDS=0 to 200 V VGS=0 - 850 - Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 49 A, VGS = 10 V, (see Figure 14) - 188 32 100 - nC nC nC Crossing time Rise time Turn-off delay time Fall time VDD = 520 V, ID = 49 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17), (see Figure 13) - 33 59 152 98 - ns ns ns ns Gate input resistance f=1 MHz gate DC bias=0 Test signal level = 20 mV open drain - 1.9 - Ω pF pF pF pF 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/13 Doc ID 018885 Rev 1 STW54NM65ND Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions Min Typ. Max Unit - 49 196 A A 1.3 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 49 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 49 A, di/dt = 100 A/µs VDD = 60 V Figure 15 - 212 2 19 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 49 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C Figure 15 - 296 4 28 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 018885 Rev 1 5/13 Electrical characteristics STW54NM65ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM09170v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 10 is ea ) ar S(on is D th R x in n ma o ti y ra d b e e p O imit L 10µs 100µs 1ms 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/13 Doc ID 018885 Rev 1 STW54NM65ND Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM09171v1 VGS (V) VDD=520V ID=49A 12 500 VDS 10 Capacitance variations AM09172v1 C (pF) 10000 Ciss 400 1000 8 300 6 Coss 100 200 4 100 2 0 0 50 100 150 200 10 1 0.1 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature Crss 1 10 100 VDS(V) Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 018885 Rev 1 7/13 Test circuits 3 STW54NM65ND Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 018885 Rev 1 10% AM01473v1 STW54NM65ND 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 018885 Rev 1 9/13 Package mechanical data Table 8. STW54NM65ND TO-247 mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 10/13 Typ. 5.50 Doc ID 018885 Rev 1 STW54NM65ND Package mechanical data Figure 19. TO-247 drawing 0075325_F Doc ID 018885 Rev 1 11/13 Revision history 5 STW54NM65ND Revision history Table 9. 12/13 Document revision history Date Revision 03-Jun-2011 1 Changes Initial release Doc ID 018885 Rev 1 STW54NM65ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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