TGS BAV99

TIGER ELECTRONIC CO.,LTD
SOT-23 Plastic-Encapsulate Diodes
BAW56/BAV70/BAV99
SOT-23
SWITCHING DIODE
FEATURES
z
Fast Switching Speed
z
For General Purpose Switching Applications
z
High Conductance
BAW56 Marking: A1
BAV70 Marking: A4
BAV99 Marking: A7
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
70
VR
Reverse Voltage
V
IF
200
mA
IFM(surge)
500
mA
PD
225
mW
RθJA
556
℃/W
TJ
150
℃
-55~+150
℃
Forward Current
Peak Forward Surge Current
Unit
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
TSTG
Storage Temperature range
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Symbol
VR
Min
Typ
Max
70
Unit
Conditions
V
IR=100μA
VF1
0.715
V
IF=1mA
VF2
0.855
V
IF=10mA
VF3
1
V
IF=50mA
VF4
1.25
V
IF=150mA
Reverse current
IR
2.5
μA
VR=70V
Capacitance between terminals
CT
1.5
pF
VR=0,f=1MHz
Reverse recovery time
t rr
6
ns
Forward voltage
IF = IR = 10mA,
Irr= 0.1 x IR, RL = 100Ω
A,May,2011
Typical Characteristics
Forward
BAV99
Reverse
Characteristics
Characteristics
1000
300
100
(nA)
REVERSE CURRENT IR
FORWARD CURRENT
10
Ta
=2
5℃
Ta
=1
00
℃
30
IF
(mA)
300
3
1
Ta=100℃
100
30
10
Ta=25℃
3
0.3
0.1
0.0
0.4
0.8
FORWARD VOLTAGE
1.2
VF
1
1.6
0
20
(V)
40
REVERSE VOLTAGE
60
VR
80
(V)
Power Derating Curve
Capacitance Characteristics
1.4
300
Ta=25℃
f=1MHz
(mW)
PD
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
250
1.3
1.2
1.1
200
150
100
50
1.0
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃)
A,May,2011