TIGER ELECTRONIC CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Maximum Ratings @Ta=25℃ Parameter Symbol Limit 70 VR Reverse Voltage V IF 200 mA IFM(surge) 500 mA PD 225 mW RθJA 556 ℃/W TJ 150 ℃ -55~+150 ℃ Forward Current Peak Forward Surge Current Unit Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature TSTG Storage Temperature range Electrical Characteristics @Ta=25℃ Parameter Reverse breakdown voltage Symbol VR Min Typ Max 70 Unit Conditions V IR=100μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1 V IF=50mA VF4 1.25 V IF=150mA Reverse current IR 2.5 μA VR=70V Capacitance between terminals CT 1.5 pF VR=0,f=1MHz Reverse recovery time t rr 6 ns Forward voltage IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω A,May,2011 Typical Characteristics Forward BAV99 Reverse Characteristics Characteristics 1000 300 100 (nA) REVERSE CURRENT IR FORWARD CURRENT 10 Ta =2 5℃ Ta =1 00 ℃ 30 IF (mA) 300 3 1 Ta=100℃ 100 30 10 Ta=25℃ 3 0.3 0.1 0.0 0.4 0.8 FORWARD VOLTAGE 1.2 VF 1 1.6 0 20 (V) 40 REVERSE VOLTAGE 60 VR 80 (V) Power Derating Curve Capacitance Characteristics 1.4 300 Ta=25℃ f=1MHz (mW) PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.3 1.2 1.1 200 150 100 50 1.0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) A,May,2011