1N4148W SOD-123 FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z z For General Purpose Switching Applications z High Conductance + MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 100 V Peak Repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM 100 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 71 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Peak forward surge current @=1.0μs @=1.0s 2.0 IFSM A 1.0 Pd 500 mW RθJA 250 ℃/W Junction temperature Tj 150 ℃ Storage temperature TSTG -65~+150 ℃ Power Dissipation Thermal Resistance from Junction to Ambient Electrical Ratings @Ta=25℃ Parameter Max. Unit VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse Recovery Time trr 4 ns Forward voltage Reverse current Symbol Min. Typ. Conditions IF=IR=10mA Irr=0.1XIR,RL=100Ω １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 1N4148W Forward (mA) 1000 Characteristics REVERSE CURRENT IR C o FORWARD CURRENT Ta =2 5 Ta =1 00 o IF C (nA) 100 10 1 0.1 0.01 0.0 Reverse 10000 o Ta=100 C 1000 100 o Ta=25 C 10 1 0.4 0.8 1.2 FORWARD VOLTAGE VF 1.6 0 20 (V) 40 60 REVERSE VOLTAGE 80 VR 100 (V) Power Derating Curve Capacitance Characteristics 1.6 600 (mW) Ta=25℃ f=1MHz PD 1.4 1.2 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Characteristics 1.0 0.8 0.6 500 400 300 200 100 0 0 4 8 12 REVERSE VOLTAGE 16 VR 20 (V) 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta (℃ ) ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 150