TIGER ELECTRONIC CO.,LTD STN1A60/80 Silicon Bidirectional Triode Thyristors GENERAL DESCRIPTION Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO - 92 package which is readily adaptable for use in automatic insertion equipment. Typ Parameter Symbol Repetitive peak off-state voltages VDRM VRRM RMS on-state current IT(RMS) 1.0 A ITSM 10 A Tj 110 o Tstg -45~150 o Non-repetitive peak on-state current Max. Operating Junction Temperature Storage Temperature STN1A60 STN1A80 600 800 Parameter Symbol Repetitive peak off-state voltage s VDRM VRRM RMS on-state current IT(RMS) Unit V C C Test Conditions Min — Typ STN1A60 STN1A80 600 800 Max Unit — V all conduction angles — 1.0 — A On-state voltage VT IT=1.5 A — — 1.60 V Holding current IH VD =12 V; IGT=10 mA — — 5 mA — — 5.0 — — 5.0 T2+G+ Gate trigger T2+G- current T2-G- — — 5.0 T2-G+ — — 12 — 0.5 1.8 Gate trigger voltage IGT VGT VD =6.0 V; RL= 10Ω VD =6.0 V; RL= 10Ω mA V