STN1A80 Logic Level Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 800V ■ R.M.S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM=500uA@TC=125℃ ■ Low holding current: IH=4mA (typ.) ■ High Commutation dV/dt. General Description General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers,logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol Parameter VDRM Peak Repetitive Forward Blocking Voltage(gate open) (Note 1) T(RMS) Forward Current RMS (All Conduction Angles, TL=50℃) ITSM Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) Circuit Fusing Considerations (tp= 10 ms) PGM PG(AV) Value Units 800 V 1 A 9.1/10 A 0.41 Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) Average Gate Power — Forward, (Over any 20ms period) 5 W 0.1 W 50 A/μs Critical rate of rise of on-state current dI/dt TJ=125℃ ITM = 1.5A; IG = 200mA; dIG/dt = 200mA/ms IFGM Peak Gate Current — Forward, Tj = 125°C (20 μs, 120 PPS) 0.5 A VRGM Peak Gate Voltage — Reverse, Tj = 125°C (20 μs, 120 PPS) 6 V TJ, Junction Temperature -40 ~ 125 ℃ Tstg Storage Temperature -40~150 ℃ 2 g mass Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-state. The rate of rise of current should not exceed 3A/us. Thermal Characteristics Value Typ Max Symbol Parameter RQJC Thermal Resistance, Junction-to-Case - - 60 ℃/W RQJA ThermalResistance,Junction-to-Ambient - - 120 ℃/W Min Units 1 /5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved STN1A80 Electrical Characteristics (TJ = 25°C unless otherwise specified) Symbol Characteristics Peak Forward or Reverse Blocking Current Min Typ. Max TJ=25℃ - - 5 TJ=125℃ - - 500 (Note2) - 1.2 1.5 - 0.4 5 - 1.3 5 - 1.4 5 - 3.8 7 - - 1.2 - - 1.2 - - 1.2 - - 1.5 0.2 - - 10 20 - 1.3 5 - 1.2 5 T2+G- - 4.0 8 T2-G- - 1.0 5 - 2.5 8 - - 420 IDRM μA (VD= VDRM/VRRM,gate open) VTM Unit Forward “On” Voltage (ITM = 1.5 A) V T2+G+ IGT Gate Trigger Current (Continuous dc) T2+G- (VD = 12 Vdc, RL = 33 Ω) T2-G- mA T2-G+ T2+G+ VGT Gate Trigger Voltage (Continuous dc) T2+G- (VD =12 Vdc, RL = 33 Ω) T2- G- V T2-G+ VGD Gate threshold voltage(TJ=125℃, VD=VDRM,RL=3.3KΩ) Critical rate of rise of commutation Voltage V - dV/dt V/μs (VD=0.67VDRM,gate open) IH Holding Current (VD =12 V, IGT = 100 mA) mA T2+G+ IL latching current (VD = 12 V; IGT = 100 mA) T2-G+ Rd Dynamic resistance (TJ=125℃) mA mΩ Note 2. Forward current applied for 1 ms maximum duration, duty cycle 2 /5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved STN1A80 Fig.1 Maximum permissible non-repetitive Peak on-state current ITSM versus number of Cycles,for sinusoidal currents,f=50Hz. Fig.3 Maximum permissible repetitive rms On-state current IT(RMS),versus surge duration, For sinusoidal currents,f=50HZ;Tlead≤66℃ Fig.2 Maximum permissible non-repetitive Peak on-state current ITSM,versus pulse width tp for sinusoidal currents,tp≤20ms Fig.4 Maximum permissible rms current IT(RMS), versus lead temperature Tlead VT（V） Fig.5 Typical and maximum on-state characteristic IR(RMS) A Fig.6 Maximum on-state dissipation,Ptot versus rms on-state current,IT(RMS) where α=conduction angle. 3 /5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved STN1A80 Fig.7 Normalised gate trigger current IGT(Ti)/ IGT(25℃),versus junction temperature Ti- Fig.9 Normalised holding current IH(Tj)/IH(25℃) Versus junction temperature Ti- Fig.8 Normalised gate trigger voltage VGT(Tj)/ VGT(25℃),versus junction temperature Tj- Fig.10 Transient thermal impedance Zth j-lead,versus pulse width tp- Fig.11 Gate Trigger Characteristics Test Circuit 4 /5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved STN1A80 TO-92 Package Dimension Unit: mm X-X 5 /5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved