SEMIWELL STN1A60

STN1A60/80
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Symbol
○
Features
3.T2
▼▲
Repetitive Peak Off-State Voltage : 600/800V
R.M.S On-State Current ( IT(RMS)= 1 A )
◆ High Commutation dv/dt
◆
○
◆
1.T1
2.Gate
○
TO-92
General Description
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static
switching relay.
Absolute Maximum Ratings
1
2
3
( TJ = 25°C unless otherwise specifed )
Symbol
Parameter
Condition
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
TC = 58 °C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
Ratings
600
800
Units
V
1.0
A
9.1/10
A
I2t
0.41
A2s
Peak Gate Power Dissipation
1.0
W
Average Gate Power Dissipation
0.1
W
IGM
Peak Gate Current
0.5
A
VGM
Peak Gate Voltage
6.0
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
0.2
g
I2t
PGM
PG(AV)
TJ
TSTG
Mass
Apr, 2003. Rev. 3
1/6
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
STN1A60/80
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half
Wave
TJ = 125 °C
-
-
0.5
mA
VTM
Peak On-State Voltage
IT = 1.5 A, Inst. Measurement
-
-
1.6
V
-
-
5
-
-
5
-
-
5
I+GT1
I
I -GT1
II
I -GT3
III
I+GT3
IV
-
7
12
V+GT1
I
-
-
1.8
V-GT1
II
-
-
1.8
V-GT3
III
-
-
1.8
V+GT3
IV
-
-
2.0
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
VGD
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
-
-
V
(dv/dt)c
Critical Rate of Rise OffState
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -0.5 A/ms,
VD=2/3 VDRM
2.0
-
-
V/㎲
-
4.0
-
mA
IH
Holding Current
Rth(j-c)
Thermal Resistance
Junction to case
-
-
50
°C/W
Rth(j-a)
Thermal Resistance
Junction to Ambient
-
-
120
°C/W
2/6
STN1A60/80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
1
10
1
VGM (6V)
25 ℃
I
25 ℃
0
10
I
I
I
On-State Current [A]
PGM (1W)
PG(AV) (0.1W)
+
GT3
IGM (0.5A)
Gate Voltage [V]
10
+
GT1
_
GT1
_
GT3
o
TJ = 125 C
0
10
o
TJ = 25 C
VGD(0.2V)
-1
-1
10
0
1
10
2
10
10
3
10
10
0.5
1.0
1.5
2.0
Allowable Case Temperature [ oC]
1.5
Power Dissipation [W]
o
π
θ
θ = 180o
θ = 150
o
θ = 120
o
θ = 90
2π
θ
360°
0.9
θ : Conduction Angle
θ = 60
o
θ = 30
o
0.6
0.3
0.0
0.0
0.2
0.4
0.6
3.0
3.5
4.0
4.5
5.0
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
1.2
2.5
On-State Voltage [V]
Gate Current [mA]
0.8
1.0
130
120
110
100
90
80
π
θ
θ
θ
θ
θ
θ
2π
θ
70
360°
60
θ : Conduction Angle
50
40
0.0
1.2
θ
0.2
0.4
RMS On-State Current [A]
0.6
0.8
o
= 30
o
= 60
o
= 90
o
= 120o
= 150
o
= 180
1.0
1.2
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
12
V
60Hz
6
4
50Hz
V
o
VGT (25 C)
V
o
8
VGT (t C)
Surge On-State Current [A]
10
1
V
+
GT1
_
GT1
+
GT3
_
GT3
2
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/6
STN1A60/80
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
Transient Thermal Impedance [ C/W]
1000
Rθ (J-A)
o
I
o
IGT (25 C)
IGT (t oC)
I
I
1
I
0.1
-50
0
+
GT1
_
GT1
_
GT3
+
GT3
50
100
100
Rθ (J-C)
10
1
-2
10
150
-1
10
o
0
1
10
2
10
10
3
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
●
4/6
▼▲
A
V
10Ω
RG
6V
●
▼▲
A
V
10Ω
RG
6V
●
▼▲
A
V
RG
6V
●
A
V
●
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
Test Procedure Ⅳ
RG
STN1A60/80
TO-92 Package Dimension
Dim.
mm
Min.
Inch
Typ.
A
Max.
Min.
4.2
Typ.
Max.
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
A
0.013
0.019
E
B
F
C
G
1
D
2
3
H
I
1. T1
2. Gate
3. T2
J
5/6
STN1A60/80
TO-92 Package Dimension, Forming
Dim.
mm
Min.
Inch
Typ.
A
Max.
Min.
Typ.
4.2
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
0.013
0.019
K
4.5
5.5
0.177
0.216
L
7.8
8.2
0.295
0.323
M
1.8
2.2
0.070
0.086
N
1.3
1.7
0.051
0.067
A
E
B
F
C
N
M
G
D
1
L
2
3
K
H
6/6
Max.
I
J
1. T1
2. Gate
3. T2