T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-56A19 Package Dimensions The MID-56A19 is a photodiode mounted in Unit: mm ( inches ) ψ5.05 (.200) special dark end look plastic package and suitable for the IRED 940nm type. 5.47 (.215) 7.62 (.300) 5.90 (.230) 1.00 (.040) FLAT DENOTES CATHOD 23.40 MIN. (.920) .50 TYP. (.020) Features l High photo sensitivity l Low junction capacitance l High cut-off frequency l Fast switching time l Acceptance viwe angle : 60° 1.00MIN. (.040) 2.54 (.100) C A Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Power Dissipation Maximum Rating Unit 150 mW o o o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55 C to +100 C Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-56A19 Optical-Electrical Characteristics Parameter Reverse Break Down Voltage Test Conditions IR=100µA Reverse Dark Current Ee=0 VR=10V Symbol V(BR)R Min. 30 Type . Max. @ TA=25oC Unit V 30 nA ID Ee=0 λ=940nm Open Circuit Voltage VOC 350 mV Tr Tf IL 30 30 12 nsec CT 25 pF 2 Ee=0.1mW/cm VR =10V,λ=940nm RL=50Ω VR =5V , λ=940nm Rise Time Fall Time Light Current µA 2 Ee=0.1mW/cm VR =3V , f=1MHZ Total Capacitance Ee=0 Typical Optical-Electrical Characteristic Curves 100 Capacitance C - pF Dark Current - pA 4000 3000 2000 1000 60 40 20 0 0 0 5 10 15 0.01 20 Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TA=25oC, Ee=0 mW/cm2 0.1 1 10 100 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm2 200 1000.0 Dark Current IR - nA Total Power Dissipation mW 80 150 100 50 0 100.0 10.0 1.0 0.1 0 20 40 60 80 100 Ambient Temperature -oC FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 0 20 40 60 80 100 Ambient Temperature-oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE 2 VR=10, Ee=0 mw/cm Unity Opto Technology Co., Ltd. 02/04/2002 MID-56A19 Typical Optical-Electrical Characteristic Curves 1000 Ip - µA 80 60 Photocurrnet Relative Spectral Sensitivity 100 40 20 100 10 1 0.1 0 700 850 1000 1150 1300 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 0.01 0.1 1 10 2 Irradiance Ee (mW/cm ) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 940 nm Relative Sensitivity 0° 10° 20° 30° 40° 1.0 0.9 50 ° 60 0.8 70 ° 80° 90 0.5 0.3 0.1 0.2 0.4 0.6 FIG .7 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002