UOT MID

T-1 3/4 PACKAGE
PIN PHOTODIODE
Description
MID-56A19
Package Dimensions
The MID-56A19 is a photodiode mounted in
Unit: mm ( inches )
ψ5.05
(.200)
special dark end look plastic package and
suitable for the IRED 940nm type.
5.47
(.215)
7.62
(.300)
5.90
(.230)
1.00
(.040)
FLAT DENOTES CATHOD
23.40 MIN.
(.920)
.50 TYP.
(.020)
Features
l
High photo sensitivity
l
Low junction capacitance
l
High cut-off frequency
l
Fast switching time
l
Acceptance viwe angle : 60°
1.00MIN.
(.040)
2.54
(.100)
C
A
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ TA=25 C
Parameter
Power Dissipation
Maximum Rating
Unit
150
mW
o
o
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55 C to +100 C
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-56A19
Optical-Electrical Characteristics
Parameter
Reverse Break Down Voltage
Test Conditions
IR=100µA
Reverse Dark Current
Ee=0
VR=10V
Symbol
V(BR)R
Min.
30
Type .
Max.
@ TA=25oC
Unit
V
30
nA
ID
Ee=0
λ=940nm
Open Circuit Voltage
VOC
350
mV
Tr
Tf
IL
30
30
12
nsec
CT
25
pF
2
Ee=0.1mW/cm
VR =10V,λ=940nm
RL=50Ω
VR =5V , λ=940nm
Rise Time
Fall Time
Light Current
µA
2
Ee=0.1mW/cm
VR =3V , f=1MHZ
Total Capacitance
Ee=0
Typical Optical-Electrical Characteristic Curves
100
Capacitance C - pF
Dark Current - pA
4000
3000
2000
1000
60
40
20
0
0
0
5
10
15
0.01
20
Reverse Volatage - VR
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
TA=25oC, Ee=0 mW/cm2
0.1
1
10
100
Reverse Voltage- VR
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ, Ee=0mW/cm2
200
1000.0
Dark Current IR - nA
Total Power Dissipation mW
80
150
100
50
0
100.0
10.0
1.0
0.1
0
20
40
60
80
100
Ambient Temperature -oC
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
0
20
40
60
80
100
Ambient Temperature-oC
FIG.4 DARK CURRENT VS AMBIENT
TEMPERATURE
2
VR=10, Ee=0 mw/cm
Unity Opto Technology Co., Ltd.
02/04/2002
MID-56A19
Typical Optical-Electrical Characteristic Curves
1000
Ip - µA
80
60
Photocurrnet
Relative Spectral Sensitivity
100
40
20
100
10
1
0.1
0
700
850
1000
1150
1300
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
0.01
0.1
1
10
2
Irradiance Ee (mW/cm )
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 940 nm
Relative Sensitivity
0° 10° 20°
30°
40°
1.0
0.9
50
°
60
0.8
70
°
80°
90
0.5 0.3 0.1 0.2 0.4 0.6
FIG .7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002