UNISONIC TECHNOLOGIES CO., LTD 10N75 Preliminary Power MOSFET 10A, 750V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 10N75 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N75 is universally applied in high efficiency switch mode power supply, active power faction correction, electronic lamp based on half bridge topology. 1 TO-220F 1 TO-220F1 FEATURES * RDS(on)=1.3Ω @VGS=10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N75L-TA3-T 10N75G-TA3-T 10N75L-TF3-T 10N75G-TF3-T 10N75L-TF1-T 10N75G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-220F1 S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 6 QW-R502-501.b 10N75 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 750 V Gate-Source Voltage VGSS ±30 V 10 A Continuous ID Drain Current Pulsed (Note 2) IDM 40 A Avalanche Current (Note 2) IAR 10 A 920 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-220 156 W Power Dissipation PD TO-220F/TO-220F1 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Absolute maximum ratings are those values beyond which the device could be permanently damaged. Note: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=17.3mH, IAS=10A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤10A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-220F/TO-220F1 TO-220 Junction to Case TO-220F/TO-220F1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 62.5 0.8 2.5 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-501.b 10N75 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 750 Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C VDS=750V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125°C Forward VDS=0V ,VGS=30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5A Forward Transconductance gFS VDS=50V, ID=5.0A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=600V, VGS=10V, ID=10A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=350V, ID=10A, RG=25Ω VDS=10V (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =10.0A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=10.0A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 10 100 100 -100 V V/°C µA µA nA nA 0.98 0.93 5.8 4.0 1.3 V Ω S 2150 2800 180 230 15 20 pF pF pF 45 13.5 17 50 130 90 80 nC nC nC ns ns ns ns 58 110 270 190 170 10.0 40.0 1.4 730 10.9 A A V ns μC 3 of 6 QW-R502-501.b 10N75 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-501.b 10N75 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs Duty Factor≤0.1% Switching Test Circuit 12V tF Switching Waveforms Same Type as D.U.T. 50kΩ 0.2μF tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-501.b 10N75 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-501.b