Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N75
Preliminary
Power MOSFET
10A, 750V N-CHANNEL
POWER MOSFET
1
TO-220
„
DESCRIPTION
The UTC 10N75 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide costomers with planar stripe
and DMOS technology. This technology specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 10N75 is universally applied in high efficiency switch
mode power supply, active power faction correction, electronic lamp
based on half bridge topology.
„
1
TO-220F
1
TO-220F1
FEATURES
* RDS(on)=1.3Ω @VGS=10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N75L-TA3-T
10N75G-TA3-T
10N75L-TF3-T
10N75G-TF3-T
10N75L-TF1-T
10N75G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F
TO-220F1
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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10N75
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
750
V
Gate-Source Voltage
VGSS
±30
V
10
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
40
A
Avalanche Current (Note 2)
IAR
10
A
920
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220
156
W
Power Dissipation
PD
TO-220F/TO-220F1
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Note: 1.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=17.3mH, IAS=10A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤10A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
„
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F/TO-220F1
TO-220
Junction to Case
TO-220F/TO-220F1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
0.8
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
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„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
750
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
VDS=750V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125°C
Forward
VDS=0V ,VGS=30V
Gate-Source Leakage Current
IGSS
Reverse
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=5A
Forward Transconductance
gFS
VDS=50V, ID=5.0A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=600V, VGS=10V, ID=10A
Gate-Source Charge
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=350V, ID=10A, RG=25Ω
VDS=10V (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =10.0A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=10.0A,
dIF/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX
UNIT
10
100
100
-100
V
V/°C
µA
µA
nA
nA
0.98
0.93
5.8
4.0
1.3
V
Ω
S
2150 2800
180
230
15
20
pF
pF
pF
45
13.5
17
50
130
90
80
nC
nC
nC
ns
ns
ns
ns
58
110
270
190
170
10.0
40.0
1.4
730
10.9
A
A
V
ns
μC
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
0.2μF
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
3mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Copyright © 2011 Unisonic Technologies Co., Ltd
Time
Unclamped Inductive Switching Waveforms
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10N75
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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